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EL816S1ATA

Transistor Output Optocouplers Optocoupler Transistor DC Input

器件类别:光电子/LED   

厂商名称:EVERLIGHT

厂商官网:http://www.everlight.com/

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器件参数
参数名称
属性值
产品种类
Product Category
Transistor Output Optocouplers
制造商
Manufacturer
EVERLIGHT
RoHS
Details
输出类型
Output Type
NPN Phototransistor
Number of Channels
1 Channel
Isolation Voltage
5000 Vrms
系列
Packaging
Reel
工厂包装数量
Factory Pack Quantity
1000
文档预览
4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 Series
Schematic
Features:
Current transfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=5V)
(CTR: 63~320% at I
F
=10mA, V
CE
=5V)
High isolation voltage between inputs
and output (Viso=5000 V rms)
Creepage distance >7.62 mm
Operating temperature up to +110°C
Compact small outline package
Pb free and RoHS compliant.
UL approved (No. E214129)
VDE approved (No. 132249)
SEMKO approved
NEMKO approved
DEMKO approved
FIMKO approved
CSA approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL816 series of devices each consist of an infrared emitting diodes,
optically coupled to a phototransistor detector.
They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
Programmable controllers
System appliances, measuring instruments
Telecommunication equipments
Home appliances, such as fan heaters, etc.
Signal transmission between circuits of different potentials and impedances
1
Revision
Copyright© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue No:
Release Date:2013-11-22 10:59:01.0
: 12
DPC-0000009 Rev. 12
www.everlight.com
LifecyclePhase:
Expired Period: Forever
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Absolute Maximum Ratings (Ta=25
°C
)
Parameter
Forward current
Peak forward current (1us, pulse)
Input
Reverse voltage
Power Dissipation
No derating required up to T
a
= 100°C
Power dissipation
Derating factor (above T
a
= 80°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*
1
Symbol
I
F
I
FP
V
R
P
D
Rating
60
1
6
100
Unit
mA
A
V
mW
150
P
C
5.8
I
C
V
CEO
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
50
80
6
200
5000
-55 to 110
-55 to 125
260
mW
mW/°C
mA
V
V
mW
Vrms
°C
°C
°C
Operating Temperature
Storage Temperature
Soldering Temperature*
2
T
SOL
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*
2 For 10 seconds
2
Revision
Copyright© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue No:
Release Date:2013-11-22 10:59:01.0
: 12
DPC-0000009 Rev. 12
www.everlight.com
LifecyclePhase:
Expired Period: Forever
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Electro-Optical Characteristics (Ta=25
°C
unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.4
10
250
Unit
V
µA
pF
Condition
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
I
CEO
BV
CEO
BV
ECO
Min
-
80
6
Typ.
-
-
-
Max.
100
-
-
Unit
nA
V
V
Condition
V
CE
= 20V, I
F
= 0mA
I
C
= 0.1mA
I
E
= 0.1mA
Transfer Characteristics
Parameter
EL816
EL816A
EL816B
EL816C
EL816D
Current
Transfer
ratio
EL816X
EL816Y
EL816I
EL816J
EL816K
EL816I
EL816J
EL816K
CTR
22
34
56
-
-
-
-
-
-
CTR
Symbol
Min
50
80
130
200
300
100
150
63
100
160
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
600
160
260
400
600
200
300
125
200
320
%
I
F
= 1mA ,V
CE
= 5V
I
F
= 10mA ,V
CE
= 5V
%
I
F
= 5mA ,V
CE
= 5V
Unit
Condition
3
Revision
Copyright© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue No:
Release Date:2013-11-22 10:59:01.0
: 12
DPC-0000009 Rev. 12
www.everlight.com
LifecyclePhase:
Expired Period: Forever
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Transfer Characteristics (T
a
=25°C unless specified otherwise) Continuity
Max.
0.2
-
1.0
-
18
18
Unit
V
pF
kHz
µs
µs
Parameter
Collector-Emitter
saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Rise time
Fall time
Symbol
V
CE(sat)
R
IO
C
IO
fc
t
r
t
f
Min
-
5×10
-
-
-
-
10
Typ.
0.1
-
0.6
80
4
3
Condition
I
F
= 20mA ,I
C
= 1mA
V
IO
= 500Vdc,
40~60% R.H.
V
IO
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100, -3dB
V
CE
= 2V, I
C
= 2mA,
R
L
= 100
* Typical values at T
a
= 25°C
4
Revision
Copyright© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue No:
Release Date:2013-11-22 10:59:01.0
: 12
DPC-0000009 Rev. 12
www.everlight.com
LifecyclePhase:
Expired Period: Forever
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL816 series
Typical Electro-Optical Characteristics Curves
5
Revision
Copyright© 2010,Everlight All Rights Reserved. Release Date : Nov13,2013. Issue No:
Release Date:2013-11-22 10:59:01.0
: 12
DPC-0000009 Rev. 12
www.everlight.com
LifecyclePhase:
Expired Period: Forever
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