4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G Series
Schematic
Features:
•
Halogens free.
•
Current transfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=5V)
•
High isolation voltage between input
and output (Viso=5000 V rms )
•
Creepage distance >7.62 mm
•
Operating temperature up to +110°C
•
Compact small outline package
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approved
•
NEMKO approved
•
DEMKO approved
•
FIMKO approved
•
CSA approved
•
CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL817-G series of devices each consist of an infrared emitting diodes, optically
coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
•
Programmable controllers
•
System appliances, measuring instruments
•
Telecommunication equipments
•
Home appliances, such as fan heaters, etc.
•
Signal transmission between circuits of different potentials and impedances
1
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Forward current
Peak forward current (1us, pulse)
Input
Reverse voltage
Power Dissipation
Symbol
I
F
I
FP
V
R
P
D
Rating
60
1
6
100
2.9
150
Unit
mA
A
V
mW
mW/°C
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Break Down Voltage
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*
1
Operating Temperature
Storage Temperature
Soldering Temperature*
2
P
C
5.8
I
C
V
CEO
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
T
SOL
50
80
7
200
5000
-55 to 110
-55 to 125
260
Notes:
*1
AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*
2 For 10 seconds
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Forward Voltage
Reverse Current
Input capacitance
Symbol
V
F
I
R
C
in
Min.
-
-
-
Typ.
1.2
-
30
Max.
1.4
10
250
Unit
V
µA
pF
Condition
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kHz
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
I
CEO
BV
CEO
BV
ECO
Min
-
80
7
Typ.
-
-
-
Max.
100
-
-
Unit
nA
V
V
Condition
V
CE
= 20V, I
F
= 0mA
I
C
= 0.1mA
I
E
= 0.1mA
Transfer Characteristics
Parameter
EL817
EL817A
Current
Transfer
ratio
EL817B
EL817C
EL817D
EL817X
EL817Y
Collector-Emitter
saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Rise time
Fall time
* Typical values at T
a
= 25°C
CTR
Symbol
Min
50
80
130
200
300
100
150
V
CE(sat)
R
IO
C
IO
fc
t
r
t
f
-
5×10
10
-
-
-
-
Typ.
-
-
-
-
-
-
-
0.1
-
0.6
80
6
8
Max.
600
160
260
400
600
200
300
0.2
-
1.0
-
18
18
V
Ω
pF
kHz
µs
µs
I
F
= 20mA ,I
C
= 1mA
V
IO
= 500Vdc,
40~60% R.H.
V
IO
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100Ω, -3dB
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω
%
I
F
= 5mA ,V
CE
= 5V
Unit
Condition
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Typical Electro-Optical Characteristics Curves
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
V
CC
I
F
Input
Pulse
I
C
R
L
Output
Input
R
IN
Output
Pulse
t
r
t
on
Figure 7. Switching Time Test Circuit & Waveforms
10%
90%
t
f
t
off
5
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
