4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Features:
•
Halogens free.
•
Current transfer ratio
(CTR: 50~600% at I
F
=5mA, V
CE
=5V)
•
High isolation voltage between input
and output (Viso=5000 V rms )
•
Creepage distance >7.62 mm
•
Operating temperature up to +110°C
•
Compact small outline package
•
Pb free and RoHS compliant.
•
UL approved (No. E214129)
•
VDE approved (No. 132249)
•
SEMKO approved (No. 716108)
•
NEMKO approved (No. P06206474)
•
DEMKO approved (No. 313924)
•
FIMKO approved (No. FI 22807)
•
CSA approved (No. 1143601)
•
CQC approved (No. 08001022762 /No. 08001022757)
EL817-G Series
Description
The EL817 series of devices each consist of an infrared
emitting diodes, optically coupled to a phototransistor
detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in
wide-lead spacing and SMD option.
Applications
•
Programmable controllers
•
System appliances, measuring instruments
•
Telecommunication equipments
•
Home appliances, such as fan heaters, etc.
•
Signal transmission between circuits of different potentials and impedances
Schematic
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Everlight Electronics Co., Ltd.
Document No：PDS-ELST-817G
1
Rev. 0
http://www.everlight.com
April ,18 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Absolute Maximum Ratings (T
a
=25°C)
Parameter
Forward current
Peak forward current (1us, pulse)
Input
Reverse voltage
Power dissipation
No derating required up to T
a
= 100°C
Power dissipation
Derating factor (above T
a
= 80°C)
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total power dissipation
Isolation voltage
*1
Operating temperature
Storage temperature
Soldering temperature
*2
Symbol
I
F
I
FP
V
R
P
D
EL817-G Series
Rating
50
1
6
70
150
Unit
mA
A
V
mW
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
P
C
5.8
I
C
V
CEO
V
ECO
P
TOT
V
ISO
T
OPR
T
STG
T
SOL
50
80
7
200
5000
-55 ~ +110
-55 ~ +125
260
Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4
are shorted together.
*2 For 10 seconds.
Everlight Electronics Co., Ltd.
Document No：PDS-ELST-817G
2
Rev. 0
http://www.everlight.com
April ,18 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Electrical Characteristics (T
a
=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Reverse current
Input capacitance
Symbol
V
F
Min.
-
-
-
Typ.*
1.2
-
30
Max.
1.4
10
250
Unit
V
µA
pF
EL817-G Series
Condition
I
F
= 20mA
V
R
= 4V
V = 0, f = 1kHz
I
R
C
in
Output
Parameter
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
Symbol
I
CEO
BV
CEO
BV
ECO
Min.
-
80
7
Typ.*
-
-
-
Max.
100
-
-
Unit
µA
V
V
Condition
V
CE
= 20V, I
F
= 0mA
I
C
= 0.1mA
I
E
= 0.1mA
Transfer Characteristics (T
a
=25°C unless specified otherwise)
Parameter
EL817
EL817A
Current Transfer
EL817B
ratio
EL817C
EL817D
Collector-Emitter
saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Rise time
Fall time
* Typical values at T
a
= 25°C
V
CE(sat)
R
IO
C
IO
fc
t
r
t
f
CTR
Symbol
Min.
50
80
130
200
400
-
5×10
10
-
-
-
-
Typ.*
-
-
-
-
-
0.1
-
0.6
80
6
8
Max.
600
160
260
400
600
0.2
-
1.0
-
18
18
V
Ω
pF
kHz
µs
µs
I
F
= 1mA ,I
C
= 20mA
V
IO
= 500Vdc,
40~60% R.H.
V
IO
= 0, f = 1MHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100Ω, -3dB
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω
%
I
F
= 5mA ,V
CE
= 5V
Unit
Condition
Everlight Electronics Co., Ltd.
Document No：PDS-ELST-817G
3
Rev. 0
http://www.everlight.com
April ,18 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Typical Performance Curves
EL817-G Series
Everlight Electronics Co., Ltd.
Document No：PDS-ELST-817G
4
Rev. 0
http://www.everlight.com
April ,18 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL817-G Series
V
CC
I
F
Input
Pulse
Output
10%
90%
I
C
R
L
Input
R
IN
Output
Pulse
t
r
t
on
Figure 10. Switching Time Test Circuit & Waveforms
t
f
t
off
Everlight Electronics Co., Ltd.
Document No：PDS-ELST-817G
5
Rev. 0
http://www.everlight.com
April ,18 2008
