HIGH SPEED CMOS LOGIC IC
■General description
ELM7SH02xB
2-input NOR gate
ELM7SH02xB is CMOS 2-input NOR gate which is suitable for battery-operated devices because of its low
voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which
allows long time operation of devices. The internal circuit which provides high noise immunity and stable
output is composed of 3 stages, including buffered output.
■Features
•
•
•
•
•
•
•
Same electrical characteristic and high speed operation as 74VHC series
Low consumption current
: Idd=1.0μA(Max.)(Top=25°C)
Wide power voltage range
: 2.0V to 5.5V
Wide input voltage range
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)
High speed
: Tpd=2ns(Typ.)(Vdd=5.0V)
Small package
: SOT-25, SC-70-5(SOT-353)
Same function and pin configuration as ELM7SxxB
■Application
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•
•
•
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Cell phones
Digital cameras
Portable electrical appliances like PDA, etc.
Computers and peripherals
Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.
Modification inside print board, adjustment of timing, solution to noise
Power voltage change from 5V to 3V
■Selection guide
ELM7SH02xB-EL
Symbol
a
b
c
d
Function
Package
Product version
Taping direction
02: 2-input NOR gate
M: SOT-25
T : SC-70-5(SOT-353)
B
EL: Refer to PKG file
ELM7SH 0 2 x B - EL
↑ ↑ ↑ ↑
a b c d
■Maximum absolute ratings
Parameter
Power supply voltage
Input voltage
Output voltage
Input protection diode current
Output parasitic diode current
Output current
VDD/GND current
Power dissipation
Storage temperature
Symbol
Vdd
Vin
Vout
Iik
Iok
Iout
Idd, Ignd
Pd
Tstg
Limit
-0.5 to +6.0
-0.5 to +6.0
-0.5 to Vdd+0.5
-
20
±
20
±
25
±
50
150
-65 to +150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
3- 1
HIGH SPEED CMOS LOGIC IC
■Suggested operating condition
Parameter
Power voltage
Input voltage
Output voltage
Operating temperature
High-input down-time
Symbol
Vdd
Vin
Vout
Top
tr, tf
ELM7SH02xB
2-input NOR gate
Limit
2.0 to 5.5
0 to 5.5
0 to Vdd
-40 to +85
Vdd=3.3
±
0.3V
Vdd=5.0
±
0.5V
Unit
V
V
V
°C
ns
0 to 200
0 to 100
■Pin configuration
TOP VIEW
5
4
1
2
3
Pin No.
1
2
3
4
5
Pin name
INB
INA
GND
OUTX
VDD
INA
Low
Low
High
High
Input
INB
Low
High
Low
High
Output
OUTX
High
Low
Low
Low
■DC electrical characteristics
Parameter
Sym.
Vih
Input voltage
Vil
Vdd
2.0
3.0
5.5
2.0
3.0
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
5.5
Top=25°C
Top=-40 to +85°C
Unit
Min.
Typ.
Max.
Min.
Max.
1.50
1.50
2.10
2.10
V
3.85
3.85
0.50
0.50
0.90
0.90
V
1.65
1.65
1.90
2.00
1.90
2.90
3.00
2.90
4.40
4.50
4.40
V
2.58
2.48
3.94
3.80
0.10
0.10
0.10
0.10
0.10
0.10
V
0.36
0.44
0.36
0.44
-0.1
0.1
-1.0
1.0
μA
1.0
10.0
μA
Condition
Voh
Output voltage
Vol
Input current
Static current
Iin
Idd
Vin=Vil
Ioh=-50μA
Ioh=-4mA
Ioh=-8mA
Iol=50μA
Vin=Vil
or
Vih
Iol=4mA
Iol=8mA
Vin=Vdd or GND
Vin=Vdd or GND
3- 2
HIGH SPEED CMOS LOGIC IC
■AC electrical characteristics
Parameter
Sym.
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
tPLH
tPHL
Cin
Cpd
Vdd
3.3
±
0.3
3.3
±
0.3
5.0
±
0.5
5.0
±
0.5
5.0
CL
15
50
15
50
ELM7SH02xB
2-input NOR gate
Top=-40 to +85°C
Unit
Max.
Min.
Max.
7.9
1.0
9.5
7.9
1.0
9.5
11.4
1.0
13.0
11.4
1.0
13.0
ns
5.5
1.0
6.5
5.5
1.0
6.5
7.5
1.0
8.5
7.5
1.0
8.5
10.0
10.0
tr=tf=3ns
Condition
Propagation
delay-time
Input
capacity
Equivalent
inner
capacity
Top=25°C
Min.
Typ.
3.9
3.5
5.5
4.9
2.7
2.6
3.9
3.6
4.0
9.7
Refer to
test circuit
pF Vin=Vdd or GND
pF
f=1MHz
* Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test
circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd
■Test circuit
Vdd
■Measured wave pattern
3ns
90%
50%
3ns
90%
50%
Vdd
10%
Pulse
Oscillator
INPUT
OUTPUT
INPUT
10%
GND
Voh
50
½
CL
OUTPUT
50%
50%
tPHL
* Output should be opened when measuring current consumption.
tPLH
Vol
■Marking
SC-70-5
SOT-25
Sym.
a
b
c
Mark
F
3
A to Z
(except I, O, X)
Content
ELM7SH series
ELM7SH02xB
Lot No.
a
b
c
a
b
c
3- 3
嵌入式系统
