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EM1ZV

Rectifier Diode, 1 Element, 1A, Silicon,

器件类别:分立半导体    二极管   

厂商名称:SANKEN

厂商官网:http://www.sanken-ele.co.jp/en/

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器件参数
参数名称
属性值
厂商名称
SANKEN
包装说明
O-PALF-W2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
SANKEN ELECTRIC CO., LTD.
EM1Z
Scope
The present specifications shall apply to an EM1Z.
Outline
Type
Structure
Applications
Silicon Diode
Resin Molded
Commercial Frequency Rectification
Flammability
UL94V-0(Equivalent)
Absolute maximum ratings
No.
1
2
3
4
5
6
7
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Symbol
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Unit
V
V
A
A
A
2
s
°C
°C
Rating
250
200
1.0
45
10.1
-40 to +150
-40 to +150
Refer to derating curve
in Section 7
10ms.
Half sine wave, one shot
1ms≦t≦10ms
Conditions
Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
1
2
3
4
Item
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current Under
High Temperature
Thermal Resistance
Symbol
V
F
I
R
H½I
R
R
th(j-l)
Unit
V
µA
µA
°C/W
Rating
0.97 max.
10 max.
500 max.
17 max.
I
F
=1.0A
V
R
=V
RM
V
R
=V
RM
, T
j
=150°C
Between Junction and Lead
Conditions
041026
1/3
61426-01
SANKEN ELECTRIC CO., LTD.
Characteristics
EM1Z
I
F(AV)
P
F
1.2
Tj=150°C
t
T
1.0
Forward Power Dissipation, P
F
(W)
0.8
t/T=1/3,sinewave
t/T=1/2
t/T=1/6
0.6
0.4
DC
0.2
0.0
0.0
0.2
0.4
0.6
Average Forward Current, I
F(AV)
(A)
0.8
1.0
Derating
T
a
I
F(AV)
1.0
t/T=1/6
V
R
=200(V)
Average Forward Current, I
F(AV)
(A)
0.8
t/T=1/3
t/T=1/2
0.6
sinewave
0.4
Tj=150°C
0.2
t
T
DC
0.0
0
50
100
150
Ambient Temperature, T
a
(°C)
041026
2/3
61426-01
SANKEN ELECTRIC CO., LTD.
8Package
information
8-1Package
type, physical dimensions and material
EM1Z
62.3
±0.7
5.0
±0.2
※3
φ2.7
±0.2
*1
*2
*3
The allowance position of Body against the center of whole lead wire is 0.5mm(max.)
The centric allowance of lead wire against center of physical body is 0.2mm(max.)
The burr may exit up to 2mm from the body of lead
φ0.78
±0.05
※1
※2
Dimensions in mm
8-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
8-3Marking
Type number
EM1Z is abbreviated as Z
Lot number 1
First digit: Last digit of Year
Second digit: Month
From 1 to 9 for Jan. to Sep.
O for Oct., N for Nov., and D for Dec.
Lot number 2 (ten days)
½
Top of the month
½½
Middle of month
½½½
End of month
M1
カ½ード表示
Cathode Band
Cathode Mark
041026
3/3
61426-01
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参数对比
与EM1ZV相近的元器件有:EM1ZV1、EM1ZV0。描述及对比如下:
型号 EM1ZV EM1ZV1 EM1ZV0
描述 Rectifier Diode, 1 Element, 1A, Silicon, Rectifier Diode, 1 Element, 1A, Silicon Rectifier Diode,
厂商名称 SANKEN SANKEN SANKEN
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
包装说明 O-PALF-W2 O-PALF-W2 -
外壳连接 ISOLATED ISOLATED -
配置 SINGLE SINGLE -
二极管元件材料 SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 代码 O-PALF-W2 O-PALF-W2 -
元件数量 1 1 -
端子数量 2 2 -
最大输出电流 1 A 1 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 ROUND ROUND -
封装形式 LONG FORM LONG FORM -
认证状态 Not Qualified Not Qualified -
表面贴装 NO NO -
端子形式 WIRE WIRE -
端子位置 AXIAL AXIAL -
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