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EM515

1 A, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Olitech Electronics

厂商官网:http://olitech-elec.com/En_index.asp

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Email: info@olitech-elec.com
Website: www.olitech-elec.com
GENERAL PURPOSE SILICON RECTIFIER
Forward Current -
1.0 Ampere
EM513 THRU EM520
Reverse Voltage -
1600 to 2000 Volts
DO-41
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034 (0.9)
0.028 (0.7)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight
:0.26 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
EM513
EM516
EM520
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
1600
1120
1600
1800
1260
1800
1.0
2000
1400
2000
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
50.0
-65 to +175
Amps
Volts
uA
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
OLITECH ELECTRONICS CO. LTD.
Page:P2-P1
Email: info@olitech-elec.com
Website: www.olitech-elec.com
RATINGS AND CHARACTERISTIC CUR
VES EM513 THRU EM520
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
£PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
1,000
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
100
TJ=150 C
1
10
0.1
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
TJ=100 C
1
0.01
0.6
0.8
1.0
1.2
1.4
1.5
0.1
TJ=25 C
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
100
JUNCTION CAPACITANCE, pF
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
OLITECH ELECTRONICS CO. LTD.
Page:P2-P2
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参数对比
与EM515相近的元器件有:EM513、EM516、EM518、EM514、EM517、EM520、EM519。描述及对比如下:
型号 EM515 EM513 EM516 EM518 EM514 EM517 EM520 EM519
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