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EM516

1 A, 1800 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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BL
FEATURES
GALAXY ELECTRICAL
EM513 --- EM518
VOLTAGE RANGE: 1600 --- 2000 V
CURRENT: 1.0 A
PLASTIC SILICON RECTIFIER
Molded case feature for auto insertion
High current capability
Low leakage current
High surge capability
High temperature soldering guaranteed:
250 /10sec/0.375" (9.5mm) lead length at 5 lbs
tension
DO - 41
MECHANICAL DATA
Case:JEDEC DO -41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EM513
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
EM516
1800
1260
1800
1.0
EM518
2000
1400
2000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
1600
1120
1600
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.1
5.0
50.0
10
50
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient at 0.375"(9.5mm) lead length, P.C.board mounted
www.galaxycn.com
Document Number 0260033
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
1.0
EM513 --- EM518
FIG.2 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT, AMPERES
20
10
4
0.8
AMPERES
0.6
1
.4
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.1
.04
    
T
J
=25
Pulse Width=300
μ
s
0
25
50
75
100
125
150
175
.01
.6
.8
1.0
1.2
1.4 1.5
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.3 -- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
CURRENT, AMPERES
45
8.3ms Single Half
Sine-Wave
(JEDEC Method)
INSTANTANEOUS REVERSE
CURRENT, MICRO AMPERES
PEAK FORWARD SURGE
10
4
TJ=100℃
1
.4
.1
.04
.01
0
20
40
60
80
100
120
140
TJ=25℃
40
30
20
10
0
1
4
10
40
100
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
200
JUNCTION CAPACITANCE, pF
100
40
10
TJ=25℃
4
1
.1
.4
1
4
10
40
100
REVERSE VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0260033
BL
GALAXY ELECTRICAL
2.
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参数对比
与EM516相近的元器件有:EM513、EM518。描述及对比如下:
型号 EM516 EM513 EM518
描述 1 A, 1800 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE SIGNAL DIODE
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