EM621FU16BU Series
Low Power, 128Kx16 SRAM
Document Title
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
0.1 Revision
Draft Date
Oct. 31, 2007
Nov. 16, 2007
Remark
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Zip Code : 690-719
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM621FU16BU Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM621FU16BU Series : 2.7V~3.3V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
-
Package Type: 44-TSOP2
PRODUCT FAMILY
Power Dissipation
Product
Family
EM621FU16BU-45LF
EM621FU16BU-55LF
EM621FU16BU-70LF
Operating
Temperature
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Industrial (-40 ~ 85
o
C)
Vcc Range
Speed
Standby
(I
SB1
, Typ.)
1
µA
1
µA
1
µA
Operating
(I
CC1
.Max)
3mA
3mA
3mA
PKG Type
GENERAL DESCRIPTION
The EM621FU16BU series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
The EM621FU16BU series are available in KGD, JEDEC
standard 44 pin 400 mil TSOP2 package.
2.7V~3.3V
2.7V~3.3V
2.7V~3.3V
45ns
55ns
70ns
44-TSOP2
44-TSOP2
44-TSOP2
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/O 0
I/O 1
I/O 2
I/O 3
VCC
VSS
I/O 4
I/O 5
I/O 6
I/O 7
WE
A16
A15
A14
A13
A12
FUNCTIONAL BLOCK DIAGRAM
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O 15
I/O 14
I/O 13
I/O 12
VSS
VCC
I/O 11
I/O 10
I/O 9
I/O 8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Pre-charge Circuit
EM621FU16BU-45LF
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
CC
V
SS
Row Select
Memory Array
1024 x 2048
I/O0 ~ I/O7
I/O8 ~ I/O15
Data
Cont
Data
Cont
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Name
CS
OE
WE
A0~A16
I/O0~I/O15
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (I/O
8~15
)
Lower Byte (I/O
0~7
)
No Connection
WE
OE
UB
LB
CS
Control Logic
2
EM621FU16BU Series
Low Power, 128Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
A
Minimum
-0.2 to 4.0V
-0.2 to 4.0V
1.0
-40 to 85
Unit
V
V
W
o
C
*
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS
H
X
L
L
L
L
L
L
L
L
OE
X
X
H
H
L
L
L
X
X
X
WE
X
X
H
H
H
H
H
L
L
L
LB
X
H
L
X
L
H
L
L
H
L
UB
X
H
X
L
H
L
L
H
L
L
I/O
0-7
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
I/O
8-15
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Stand by
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
Note: X means don’t care. (Must be low or high state)
3
EM621FU16BU Series
Low Power, 128Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
2.7
0
2.0
-0.2
3)
Typ
3.0
0
-
-
Max
3.3
0
V
CC
+ 0.2
2)
0.6
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS=V
IL
, V
IN
=V
IH
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS<0.2V, LB<0.2V or/and UB<0.2V,
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS=V
IL
, LB=V
IL
or/and UB=V
IL ,
V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
I
OH
= -1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS>V
CC
-0.2V, (CS controlled)
Other inputs = 0~V
CC
(Typ. condition : V
CC
=3.0V @ 25
o
C)
(Max. condition : V
CC
=3.3V @ 85
o
C)
Test Conditions
Min
-1
-1
-
-
45ns
55ns
70ns
-
-
-
-
2.4
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
3
3
35
30
25
0.4
-
0.3
Unit
uA
uA
mA
mA
mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
OL
V
OH
I
SB
V
V
mA
Standby Current (CMOS)
I
SB1
LF
-
1
1)
10
uA
NOTES
1. Typical values are measured at Vcc=3.0V, T
A
=
25
o
C and not 100% tested.
4
EM621FU16BU Series
Low Power, 128Kx16 SRAM
V
TM3)
R
12)
AC OPERATING CONDITIONS
Test Conditions (Test
Load and Test Input/Output Reference)
Input Pulse Level : 0.4V to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL
1)
= 100pF + 1 TTL (70ns)
CL
1)
= 30pF + 1 TTL (45ns/55ns)
1. Including scope and Jig capacitance
R
2
=3150 ohm
2. R
1
=3070 ohm
,
3. V
TM
=2.8V
4. CL = 5pF + 1 TTL (measurement with t
LZ
, t
HZ
, t
OLZ
, t
OHZ
, t
WHZ
)
CL
1)
R
22)
READ CYCLE
(V
cc
=2.7V to 3.3V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Read cycle time
Address access time
Chip select to output
Output enable to valid output
UB, LB access time
Chip select to low-Z output
UB, LB enable to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
UB, LB disable to high-Z output
Output disable to high-Z output
Output hold from address change
Symbol
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
BLZ
t
OLZ
t
HZ
t
BHZ
t
OHZ
t
OH
45ns
Min
45
-
-
-
Max
-
45
45
25
45
10
5
5
0
0
0
10
-
-
-
20
15
15
-
10
10
5
0
0
0
10
Min
55
-
-
-
55ns
Max
-
55
55
25
55
-
-
-
20
20
20
-
10
10
5
0
0
0
10
Min
70
-
-
-
70ns
Max
-
70
70
35
70
-
-
-
25
25
25
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
(V
cc
=2.7V to 3.3V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Write cycle time
Chip select to end of write
Address setup time
Address valid to end of write
UB, LB valid to end of write
Write pulse width
Write recovery time
Write to ouput high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
t
WC
t
CW
t
AS
t
AW
t
BW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
45ns
Min
45
45
0
45
45
35
0
0
25
0
5
-
-
Max
-
-
-
-
-
-
-
15
55
45
0
45
45
40
0
0
25
0
5
55ns
Min
Max
-
-
-
-
-
-
-
20
Min
70
60
0
60
60
50
0
0
30
-
-
0
5
70ns
Max
-
-
-
-
-
-
-
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
ns
ns
5
