EM620FU8B
Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Low Power, 256Kx8 SRAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
0.1 Revision
Fix typo error
Draft Date
Oct. 31, 2007
Nov. 16, 2007
Remark
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Emerging Memory & Logic Solutions Inc.
Zip Code : 690-719
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM620FU8B
256K x8 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15µm Full CMOS
-
Organization :256K x8
-
Power Supply Voltage
=> EM620FU8B : 2.7~3.3V
-
Low Data Retention Voltage : 1.5V
-
Three state output and TTL Compatible
-
Packaged product designed for 45/55/70ns
GENERAL PHYSICAL SPECIFICATIONS
-
Backside die surface of polished bare silicon
-
Typical Die Thickness = 725um +/-15um
-
Typical top-level metallization :
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
-
Topside Passivation :
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
-
Wafer diameter : 8 inch
1
Low Power, 256Kx8 SRAM
56
29
EM620FU8B (Dual C/S)
+
(0.0)
EMLSI LOGO
28
y
PAD DESCRIPTIONS
Name
CS1,CS2
OE
WE
A0~A17
I/O0~I/O7
Function
Chip select inputs
Output Enable input
Write Enable input
Address Inputs
Data Inputs/Outputs
Name
Vcc
Vss
NC
Function
Power Supply
x
Pre-charge Circuit
Row Select
Ground
No Connection
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
V
CC
V
SS
Memory Array
1024 x 2048
I/O0 ~ I/O7
Data
Cont
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
WE
OE
CS1
CS2
Control Logic
BONDING INSTRUCTIONS
The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates.
EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity.
2
EM620FU8B
ABSOLUTE MAXIMUM RATINGS *
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Operating Temperature
Low Power, 256Kx8 SRAM
Symbol
V
IN
, V
OUT
V
CC
P
D
T
A
Minimum
-0.2 to 4.0V
-0.2 to 4.0V
1.0
-40 to 85
Unit
V
V
W
o
C
*
Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS1
H
X
L
L
L
CS2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
I/O
0-7
High-Z
High-Z
High-Z
Data Out
Data In
Mode
Deselected
Deselected
Output Disabled
Read
Write
Power
Stand by
Stand by
Active
Active
Active
Note: X means don’t care. (Must be low or high state)
3
EM620FU8B
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Low Power, 256Kx8 SRAM
Symbol
V
CC
V
SS
V
IH
V
IL
Min
2.7
0
2.0
-0.2
3)
Typ
3.0
0
-
-
Max
3.3
0
V
CC
+ 0.2
2)
0.6
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: V
CC
+2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested
.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
V
OL
V
OH
I
SB
V
IN
=V
SS
to V
CC
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS1=V
IL
, CS2=WE=V
IH
, V
IN
=V
IH
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA,
CS1<0.2V, CS2>V
CC
-0.2V,
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS1=V
IL
, CS2=V
IH,
V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
I
OH
= -1.0mA
CS1=V
IH
, CS2=V
IL
, Other inputs=V
IH
or V
IL
CS1>V
CC
-0.2V, CS2>V
CC
-0.2V (CS controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~V
CC
(Typ. condition : V
CC
=3.0V @ 25
o
C)
(Max. condition : V
CC
=3.3V @ 85
o
C)
Test Conditions
Min
-1
-1
-
-
45ns
55ns
70ns
-
-
-
-
2.4
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
3
3
35
30
25
0.4
-
0.3
Unit
uA
uA
mA
mA
mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
V
mA
Standby Current (CMOS)
I
SB1
LF
-
1
1)
10
uA
NOTES
1. Typical values are measured at Vcc=3.0V, T
A
=
25
o
C and not 100% tested.
4
EM620FU8B
AC OPERATING CONDITIONS
Low Power, 256Kx8 SRAM
V
TM3)
R
12)
Test Conditions (Test
Load and Test Input/Output Reference)
Input Pulse Level : 0.4V to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL
1)
= 100pF + 1 TTL
CL
1)
= 30pF + 1 TTL (only 45ns part)
1. Including scope and Jig capacitance
R
2
=3150 ohm
2. R
1
=3070 ohm
,
3. V
TM
=2.8V
4. CL = 5pF + 1 TTL (measurement with t
LZ1,2
, t
HZ1,2
, t
OLZ
, t
OHZ
, t
WHZ
)
CL
1)
R
22)
READ CYCLE
(V
cc
= 2.7V to 3.3V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Symbol
t
RC
t
AA
t
CO1,
t
CO2
t
OE
t
LZ1,
t
LZ2
t
OLZ
t
HZ1,
t
HZ2
t
OHZ
t
OH
45ns
Min
45
-
-
-
10
5
0
0
10
Max
-
45
45
25
-
-
20
15
-
Min
55
-
-
-
10
5
0
0
10
55ns
Max
-
55
55
25
-
-
20
20
-
Min
70
-
-
-
10
5
0
0
10
70ns
Max
-
70
70
35
-
-
25
25
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE
(V
cc
= 2.7V to 3.3V, Gnd = 0V, T
A
= -40
o
C to +85
o
C)
Parameter
Write cycle time
Chip select to end of write
Address setup time
Address valid to end of write
Write pulse width
Write recovery time
Write to ouput high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Symbol
t
WC
t
CW1,
t
CW2
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
45ns
Min
45
45
0
45
35
0
0
25
0
5
-
-
Max
-
-
-
-
-
-
15
55
45
0
45
40
0
0
25
0
5
55ns
Min
Max
-
-
-
-
-
-
20
Min
70
60
0
60
50
0
0
30
-
-
0
5
70ns
Max
-
-
-
-
-
-
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
-
-
ns
ns
5
