EN29LV320
EN29LV320
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
•
Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
•
High performance
- Access times as fast as 70 ns
•
Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1
µA
current in standby or automatic
sleep mode.
•
Standard DATA# polling and toggle bits
feature
•
Unlock Bypass Program command supported
•
Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
•
Support JEDEC Common Flash Interface
(CFI).
•
Low Vcc write inhibit < 2.5V
•
Minimum 100K program/erase endurance
cycles.
•
RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
•
WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
•
Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
•
Commercial and Industrial Temperature
Range.
•
Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
•
-
-
-
High performance program/erase speed
Word program time: 8µs typical
Sector erase time: 500ms typical
Chip erase time: 70s typical
•
JEDEC Standard compatible
GENERAL DESCRIPTION
The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The
EN29LV320 features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV320 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2006/05/16
EN29LV320
CONNECTION DIAGRAMS
FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
H6
A13
A12
A14
A15
A16
BYTE#
DQ15/A-1
Vss
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
A19
DQ5
DQ12
Vcc
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
A2
WP# /ACC
B2
A18
C2
A20
D2
DQ2
E2
DQ10
F2
DQ11
G2
DQ3
H2
A7
A1
A17
B1
A6
C1
A5
D1
DQ0
E1
DQ8
F1
DQ9
G1
DQ1
H1
A3
A4
A2
A1
A0
CE#
OE#
Vss
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2006/05/16
EN29LV320
TABLE 1. PIN DESCRIPTION
LOGIC DIAGRAM
Pin Name
A0-A20
DQ0-DQ14
DQ15 / A-1
CE#
OE#
WE#
WP#/ACC
RESET#
BYTE#
RY/BY#
Vcc
Vss
NC
Function
21 Address inputs
15 Data Inputs/Outputs
DQ15 (data input/output, in word mode),
A-1 (LSB address input, in byte mode)
Chip Enable
Output Enable
Write Enable
Write Protect / Acceleration Pin
Hardware Reset Pin
Byte/Word mode selection
Ready/Busy Output
Supply Voltage
(2.7-3.6V)
Ground
Not Connected to anything
EN29 LV320
A0 – A20
WP#/ACC
RESET#
CE#
OE#
WE#
BYTE#
RY/BY#
DQ0 – DQ15
(A-1)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2006/05/16
EN29LV320
ORDERING INFORMATION
─
EN29LV320
T
70
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Fine Pitch Ball Grid Array (FBGA)
0.80mm pitch, 6mm x 8mm package
SPEED
70 = 70ns
90 = 90ns
BOOT CODE SECTOR ARCHITECTURE
T = Top boot Sector
B = Bottom boot Sector
BASE PART NUMBER
EN = EON Silicon Solution Inc.
29LV = FLASH, 3V Read, Program and Erase
320 = 32 Megabit (4M x 8 / 2M x 16)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2006/05/16
EN29LV320
Table 2A. Top Boot Sector Address Tables (EN29LV320T)
U
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
A20 – A12
000000xxx
000001xxx
000010xxx
000011xxx
000100xxx
000101xxx
000110xxx
000111xxx
001000xxx
001001xxx
001010xxx
001011xxx
001100xxx
001101xxx
001110xxx
001111xxx
010000xxx
010001xxx
010010xxx
010011xxx
010100xxx
010101xxx
010110xxx
010111xxx
011000xxx
011001xxx
011010xxx
011011xxx
011100xxx
011101xxx
011110xxx
011111xxx
100000xxx
100001xxx
100010xxx
100011xxx
100100xxx
100101xxx
Sector Size
(Kbytes / Kwords)
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
Address Range (h)
Byte mode (x8)
000000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
200000–20FFFF
210000–21FFFF
220000–22FFFF
230000–23FFFF
240000–24FFFF
250000–25FFFF
Address Range (h)
Word Mode (x16)
000000–007FFF
008000–00FFFF
010000–017FFF
018000–01FFFF
020000–027FFF
028000–02FFFF
030000–037FFF
038000–03FFFF
040000–047FFF
048000–04FFFF
050000–057FFF
058000–05FFFF
060000–067FFF
068000–06FFFF
070000–077FFF
078000–07FFFF
080000–087FFF
088000–08FFFF
090000–097FFF
098000–09FFFF
0A0000–0A7FFF
0A8000–0AFFFF
0B0000–0B7FFF
0B8000–0BFFFF
0C0000–0C7FFF
0C8000–0CFFFF
0D0000–0D7FFF
0D8000–0DFFFF
0E0000–0E7FFF
0E8000–0EFFFF
0F0000–0F7FFF
0F8000–0FFFFF
100000–107FFF
108000–10FFFF
110000–117FFF
118000–11FFFF
120000–127FFF
128000–12FFFF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. E, Issue Date: 2006/05/16
