eGaN® FET DATASHEET
EPC2001
EPC2001 – Enhancement Mode Power Transistor
V
DSS
, 100 V
R
DS(ON)
, 7 mW
I
D
, 25 A
NEW PRODUCT
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low R
DS(ON)
, while its lateral device structure
and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
V
DS
I
D
V
GS
T
J
T
STG
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
Continuous (T
A
= 25˚C,
θ
JA
= 13)
Pulsed (25˚C, Tpulse = 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
PARAMETER
Static Characteristics
(T
J
= 25˚C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-to-Source Voltage
Drain Source Leakage
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
V
GS
= 0 V, I
D
= 300 µA
V
DS
= 80 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -5 V
V
DS
= V
GS
, I
D
= 5 mA
V
GS
= 5 V, I
D
= 25 A
0.7
100
100
120
25
100
6
-5
-40 to 125
-40 to 150
TEST CONDITIONS
V
V
A
V
˚C
EPC2001 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low R
DS(on)
• Ultra low Q
G
• Ultra small footprint
MIN
TYP
MAX
UNIT
V
100
1
0.2
1.4
5.6
250
5
1
2.5
7
µA
mA
V
m
Source-Drain Characteristics
(T
J
= 25˚C unless otherwise stated)
V
SD
Source-Drain Forward Voltage
I
S
= 0.5 A, V
GS
= 0 V, T = 25˚C
I
S
= 0.5 A, V
GS
= 0 V, T = 125˚C
1.75
1.8
V
All measurements were done with substrate shorted to source.
Thermal Characteristics
TYP
R
θ
JC
R
θ
JB
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient (Note 1)
2.1
15
54
˚C/W
˚C/W
˚C/W
Note 1: R
θ
JA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION |
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| COPYRIGHT 2013 |
| PAGE 1
eGaN® FET DATASHEET
EPC2001
PARAMETER
Dynamic Characteristics
(T
J
= 25˚C unless otherwise stated)
C
ISS
C
OSS
C
RSS
Q
G
Q
GD
Q
GS
Q
OSS
Q
RR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 5 V)
Gate to Drain Charge
Gate to Source Charge
Output Charge
Source-Drain Recovery Charge
TEST CONDITIONS
MIN
TYP
850
MAX
950
525
30
10
2.7
2.8
40
0
UNIT
V
DS
= 50 V, V
GS
= 0 V
450
20
8
pF
V
DS
= 50 V, I
D
= 25 A
V
DS
= 50 V, V
GS
= 0 V
2.2
2.3
35
0
nC
All measurements were done with substrate shorted to source.
Figure 1: Typical Output Characteristics
100
90
80
80
V
GS
= 5
V
GS
= 4
V
GS
= 3
V
GS
= 2
100
Figure 2: Transfer Characteristics
25˚C
125˚C
V
DS
= 3V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
2
70
60
50
40
30
20
10
0
0
0.2
0.4
60
40
20
V
DS
– Drain to Source Voltage (V)
0.6
0.8
1
1.2
1.4
1.6
1.8
0
0
0.5
1
V
GS
– Gate-to-Source Voltage (V)
1.5
2
2.5
3
3.5
4
4.5
20
Figure 3: R
DS(on)
vs V
GS
for Various Current
R
DS(ON)
– Drain to Source Resistance (mΩ)
I
D
= 10 A
I
D
= 20 A
I
D
= 40 A
I
D
= 80 A
20
Figure 4: R
DS(on)
vs V
GS
for Various Temperature
25˚C
125˚C
R
DS(ON)
– Drain to Source Resistance (mΩ)
18
16
14
12
10
8
6
4
2
0
2
2.5
15
I
D
= 25 A
10
5
V
GS
– Gate to Source Voltage (V)
3
3.5
4
4.5
5
5.5
0
2
2.5
V
GS
– Gate-to-Source Voltage (V)
3
3.5
4
4.5
5
5.5
Figure 5: Capacitance
Figure 6: Gate Charge
EPC –
1.4
EFFICIENT POWER CONVERSION CORPORATION |
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| COPYRIGHT 2013 |
5
C
OSS
= C
GD
+ C
SD
4.5
I
D
= 25 A
| PAGE 2
0
2
2.5
eGaN® FET DATASHEET
V
GS
– Gate to Source Voltage (V)
3
3.5
4
4.5
5
5.5
0
2
2.5
V
GS
– Gate-to-Source Voltage (V)
3
3.5
4
4.5
5
5.5
EPC2001
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Figure 5: Capacitance
5
C
OSS
= C
GD
+ C
SD
C
ISS
= C
GD
+ C
GS
C
RSS
= C
GD
4.5
Figure 6: Gate Charge
I
D
= 25 A
V
DS
= 50 V
V
GS
– Gate to Source Voltage (V)
100
4
3.5
3
2.5
2
1.5
1
0.5
C – Capacitance (nF)
0
10
20
30
40
50
60
70
80
90
0
V
DS
– Drain to Source Voltage (V)
0
2
Q
G
– Gate Charge (nC)
4
6
8
10
100
90
Figure 7: Reverse Drain-Source Characteristics
1.8
Figure 8: Normalized On Resistance Vs Temperature
Normalized On-State Resistance – R
DS(ON)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
-20
0
20
40
60
80
100
120
140
I
D
= 25 A
V
GS
= 5 V
I
SD
– Source to Drain Current (A)
80
70
60
50
40
30
20
10
0
0.5
25˚C
125˚C
1
V
SD
– Source to Drain Voltage (V)
1.5
2
2.5
3
3.5
4
4.5
T
J
– Junction Temperature ( ˚C )
Figure 9: Normalized Threshold Voltage vs. Temperature
1.2
I
D
= 5 mA
0.025
Figure 10: Gate Current
25˚C
125˚C
1.15
0.02
Normalized Threshold Voltage
1.1
1.05
1
0.95
0.9
-20
I
G
– Gate Current (A)
0.015
0.01
0.005
0
20
40
60
80
100
120
140
0
0
1
2
3
4
5
6
T
J
– Junction Temperature ( ˚C )
All measurements were done with substrate shortened to source.
V
GS
– Gate-to-Source Voltage (V)
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| COPYRIGHT 2013 |
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eGaN® FET DATASHEET
Figure 11: Transient Thermal Response Curves
Normalized Maximum Transient Thermal Impedance
Z
θJB
, Normalized Thermal Impedance
Duty Factors:
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
0.001
0.0001
Single Pulse
1
EPC2001
P
DM
t
1
t
2
Notes:
Duty Factor: D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJB
x R
θJB
+ T
B
10
-2
10
-1
1
10
100
t
p
, Rectangular Pulse Duration, seconds
10
-5
10
-4
10
-3
Normalized Maximum Transient Thermal Impedance
1
Z
θJC
, Normalized Thermal Impedance
Duty Factors:
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
Single Pulse
0.001
10
-6
10
-5
10
-4
10
-3
P
DM
t
1
t
2
Notes:
Duty Factor: D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-2
10
-1
1
t
p
, Rectangular Pulse Duration, seconds
Figure 12: Safe Operating Area
100
10 µs
I
D
- Drain Current (A)
10
limited by R
DS(ON)
100 µs
1 ms
1
10 ms
100 ms/DC
0.1
T
J
= Max Rated, T
C
= +25°C, Single Pulse
0.1
1
10
V
DS
- Drain-Source Voltage (V)
100
1000
EPC – EFFICIENT POWER CONVERSION CORPORATION |
WWW.EPC-CO.COM
| COPYRIGHT 2013 |
| PAGE 4
eGaN® FET DATASHEET
TAPE AND REEL CONFIGURATION
4mm pitch, 12mm wide tape on 7” reel
7” reel
EPC2001
b
d
e
f
g
Loaded Tape Feed Direction
Die
orientation
dot
a
c
Gate
solder bar is
under this
corner
EPC2001 (note 1)
Dimension (mm)
target
min
max
a
b
c (note 2)
d
e
f (note 2)
g
12.0
1.75
5.50
4.00
4.00
2.00
1.5
11.7
1.65
5.45
3.90
3.90
1.95
1.5
12.3
1.85
5.55
4.10
4.10
2.05
1.6
Die is placed into pocket
solder bar side down
(face side down)
Note 1: MSL1 (moisture sensitivity level 1) classi ed according to IPC/JEDEC industry standard.
Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket,
not the pocket hole.
DIE MARKINGS
2001
YYYY
Die orientation dot
Gate Pad solder bar
is under this corner
ZZZZ
Part
Number
EPC2001
Laser Markings
Part #
Marking Line 1
2001
Lot_Date Code
Marking line 2
YYYY
Lot_Date Code
Marking Line 3
ZZZZ
DIE OUTLINE
A
f
f
X9
Solder Bar View
d
X2
DIM
2
3
4
5
6
7
8
9
10
11
B
1
A
B
c
d
e
f
g
MIN
4075
1602
1379
577
235
195
400
MICROMETERS
Nominal
4105
1632
1382
580
250
200
400
MAX
4135
1662
1385
583
265
205
400
c
e
g
g
X8
Side View
815 Max
(685)
SEATING PLANE
EPC – EFFICIENT POWER CONVERSION CORPORATION |
WWW.EPC-CO.COM
| COPYRIGHT 2013 |
100 +/- 20
| PAGE 5
