eGaN® FET DATASHEET
EPC2100
V
DS
, 30 V
R
DS(on)
, 8.2 mΩ (Q1), 2.1 mΩ (Q2)
I
D
, 10 A (Q1), 40 A (Q2)
EPC2100 – Enhancement-Mode GaN Power
Transistor Half-Bridge
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low R
DS(on)
, while its lateral device structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
DEVICE
V
DS
I
D
Q1
V
GS
T
J
T
STG
V
DS
I
D
Q2
V
GS
T
J
T
STG
PARAMETER
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
Continuous (T
A
= 25°C, R
θJA
= 92°C/W)
Pulsed (25°C, T
PULSE
= 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)
Continuous (T
A
= 25°C, R
θJA
= 22°C/W)
Pulsed (25°C, T
PULSE
= 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
VALUE
30
36
10
100
6
-4
–40 to 150
–40 to 150
30
36
40
400
6
-4
–40 to 150
–40 to 150
UNIT
V
A
V
°C
V
A
V
°C
EPC2100
eGaN® ICs are supplied only in
passivated die form with solder bumps
Die Size: 6.05 x 2.3 mm
Applications
• High Frequency DC-DC
• Point-of-Load (POL) Converters
Benefits
• High Frequency Operation
• Ultra High Efficiency
• High Density Footprint
www.epc-co.com/epc/Products/eGaNFETsandICs/EPC2100.aspx
Thermal Characteristics (T
J
= 25°C unless otherwise stated)
PARAMETER
R
θJC
R
θJB
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient (Note 1)
TYP
0.4
2.5
42
UNIT
°C/W
Note 1: R
θJA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See
http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf
for details
EPC – THE LEADER IN GaN TECHNOLOGY |
WWW.EPC-CO.COM
| COPYRIGHT 2018 |
| 1
eGaN® FET DATASHEET
Static Characteristics (T
J
= 25°C unless otherwise stated)
DEVICE
BV
DSS
I
DSS
Q1
I
GSS
V
GS(TH)
R
DS(on)
V
SD
BV
DSS
I
DSS
Q2
I
GSS
V
GS(TH)
R
DS(on)
V
SD
EPC2100
PARAMETER
Drain-to-Source Voltage
Drain-Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
Source-Drain Forward Voltage
Drain-to-Source Voltage
Drain-Source Leakage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
Source-Drain Forward Voltage
TEST CONDITIONS
V
GS
= 0 V, I
D
= 0.3 mA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -4 V
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 5 V, I
D
= 25 A
I
S
= 0.5 A, V
GS
= 0 V
V
GS
= 0 V, I
D
= 1 mA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -4 V
V
DS
= V
GS
, I
D
= 16 mA
V
GS
= 5 V, I
D
= 25 A
I
S
= 0.5 A, V
GS
= 0 V
MIN
30
TYP
0.004
0.007
0.004
MAX
0.2
3
0.2
2.5
8.2
UNIT
V
mA
mA
mA
V
mΩ
V
V
0.8
1.3
6
1.8
30
0.015
0.03
0.015
0.8
1.3
1.5
1.7
0.8
9
0.8
2.5
2.1
mA
mA
mA
V
mΩ
V
Dynamic Characteristics
DEVICE
C
ISS
C
RSS
C
OSS
C
OSS(ER)
C
OSS(TR)
Q1
Q
G
Q
GS
Q
GD
Q
G(TH)
Q
OSS
Q
RR
C
ISS
C
RSS
C
OSS
C
OSS(ER)
C
OSS(TR)
Q2
Q
G
Q
GS
Q
GD
Q
G(TH)
Q
OSS
Q
RR
PARAMETER
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge at Threshold
Output Charge
Source-Drain Recovery Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Energy Related (Note 2)
Effective Output Capacitance, Time Related (Note 3)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge at Threshold
Output Charge
Source-Drain Recovery Charge
TEST CONDITIONS
V
DS
= 15 V, V
GS
= 0 V
MIN
TYP
395
15
290
MAX
475
UNIT
435
pF
V
DS
= 0 to 15 V, V
GS
= 0 V
V
DS
= 15 V, V
GS
= 5 V, I
D
= 25 A
371
404
3.6
1.3
4.9
V
DS
= 15 V, I
D
= 25 A
0.6
0.9
nC
9.2
V
DS
= 15 V, V
GS
= 0 V
6.1
0
1630
1960
V
DS
= 15 V, V
GS
= 0 V
64
1370
2060
pF
V
DS
= 0 to 15 V, V
GS
= 0 V
V
DS
= 15 V, V
GS
= 5 V, I
D
= 25 A
1740
1900
15
4.8
19
V
DS
= 15 V, I
D
= 25 A
2.7
3.4
nC
44
V
DS
= 15 V, V
GS
= 0 V
29
0
Note 2: C
OSS(ER)
is a fixed capacitance that gives the same stored energy as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
Note 3: C
OSS(TR)
is a fixed capacitance that gives the same charging time as C
OSS
while V
DS
is rising from 0 to 50% BV
DSS
.
EPC – THE LEADER IN GaN TECHNOLOGY |
WWW.EPC-CO.COM
| COPYRIGHT 2018 |
| 2
eGaN® FET DATASHEET
Figure 1a (Q1): Typical Output Characteristics at 25°C
100
V
GS
= 5 V
80
V
GS
= 4 V
V
GS
= 2 V
400
V
GS
= 5 V
EPC2100
Figure 1b (Q2): Typical Output Characteristics at 25°C
I
D
–
Drain Current (A)
I
D
–
Drain Current (A)
V
GS
= 3 V
60
300
V
GS
= 4 V
V
GS
= 3 V
V
GS
= 2 V
200
40
100
20
0
0
0.5
V
DS
–
Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
0
0
0.5
V
DS
–
Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
Figure 2a (Q1): Transfer Characteristics
100
400
25˚C
125˚C
Figure 2b (Q2): Transfer Characteristics
80
300
25˚C
125˚C
V
DS
= 3 V
I
D
–
Drain Current (A)
60
I
D
–
Drain Current (A)
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
= 3 V
200
40
20
100
0
0.5
1.0
1.5
V
GS
– Gate-to-Source Voltage (V)
2.0
0
0.5
1.0
1.5
V
GS
– Gate-to-Source Voltage (V)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 3a (Q1): R
DS(on)
vs. V
GS
for Various Drain Currents
6
Figure 3b (Q2): R
DS(on)
vs. V
GS
for Various Drain Currents
R
DS(on)
– Drain-to-Source Resistance (m )
R
DS(on)
– Drain-to-Source Resistance (m )
20
15
I
D
= 15 A
I
D
= 25 A
I
D
= 35 A
I
D
= 50 A
5
4
3
2
1
0
I
D
= 15 A
I
D
= 25 A
I
D
= 35 A
I
D
= 50 A
10
5
0
2.5
3.0
3.5
4.0
4.5
5.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
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| COPYRIGHT 2018 |
| 3
eGaN® FET DATASHEET
Figure 4a (Q1): R
DS(on)
vs. V
GS
for Various Temperatures
6
EPC2100
Figure 4b (Q2): R
DS(on)
vs. V
GS
for Various Temperatures
R
DS(on)
– Drain-to-Source Resistance (m )
R
DS(on)
– Drain-to-Source Resistance (m )
20
25˚C
125˚C
I
D
= 25 A
5
4
3
2
1
0
25˚C
125˚C
I
D
= 25 A
15
10
5
0
2.5
3.0
V
GS
– Gate-to-Source Voltage (V)
3.5
4.0
4.5
5.0
2.5
3.0
V
GS
– Gate-to-Source Voltage (V)
3.5
4.0
4.5
5.0
Figure 5a (Q1): Capacitance (Linear Scale)
800
1000
Figure 5b (Q1): Capacitance (Log Scale)
600
Capacitance (pF)
Capacitance (pF)
C
OSS
= C
GD
+ C
SD
C
ISS
= C
GD
+ C
GS
C
RSS
= C
GD
100
C
OSS
= C
GD
+ C
SD
C
ISS
= C
GD
+ C
GS
C
RSS
= C
GD
10
400
200
0
0
5
10
15
20
25
30
1
V
DS
– Drain-to-Source Voltage (V)
0
5
V
DS
– Drain-to-Source Voltage (V)
10
15
20
25
30
Figure 5c (Q2): Capacitance (Linear Scale)
3000
2500
2000
1500
1000
500
0
10
Figure 5d (Q2): Capacitance (Log Scale)
Capacitance (pF)
Capacitance (pF)
C
OSS
= C
GD
+ C
SD
C
ISS
= C
GD
+ C
GS
C
RSS
= C
GD
1000
C
OSS
= C
GD
+ C
SD
C
ISS
= C
GD
+ C
GS
C
RSS
= C
GD
100
0
5
V
DS
– Drain-to-Source Voltage (V)
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
EPC – THE LEADER IN GaN TECHNOLOGY |
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| COPYRIGHT 2018 |
| 4
eGaN® FET DATASHEET
Figure 6a (Q1): Output Charge
C Stored Energy
Figure 6a: Output Charge and
and C
OSS
Stored Energy
OSS
EPC2100
Figure 6b (Q2): Output Charge
C Stored Energy
Figure 6a: Output Charge and
and C
OSS
Stored Energy
OSS
12
10
0.12
0.10
60
50
0.6
0.5
0.4
0.3
0.2
0.1
0.0
E
OSS
–
C
OSS
Stored Energy ( J)
8
6
4
2
0
0.08
0.06
0.04
0.02
0.00
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Figure 7a (Q1): Gate Charge
5
I
D
= 25 A
V
DS
= 15 V
5
Figure 7b (Q2): Gate Charge
V
GS
– Gate-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
4
4
I
D
= 25 A
V
DS
= 15 V
3
3
2
2
1
1
0
0
1
Q
G
– Gate Charge (nC)
2
3
4
0
0
5
Q
G
– Gate Charge (nC)
10
15
Figure 8a (Q1): Reverse Drain-Source Characteristics
100
25˚C
125˚C
3
V
DS
= 0 V
GS
60
400
Figure 8b (Q2): Reverse Drain-Source Characteristics
I
SD
– Source-to-Drain Current (A)
I
SD
– Source-to-Drain Current (A)
80
300
25˚C
125˚C
3
V
DS
= 0 V
GS
200
40
20
100
0
0
0.5
1.0
V
SD
– Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0
0.5
1.0
V
SD
– Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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| COPYRIGHT 2018 |
| 5
E
OSS
–
C
OSS
Stored Energy ( J)
Q
OSS
–
Output Charge (nC)
Q
OSS
–
Output Charge (nC)
