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ER1003

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:Transys Electronics Limited

厂商官网:http://www.transyselectronics.com

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ER1000 THRU ER1004
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE - 50 to 400 Volts CURRENT - 10.0 Amperes
FEATURES
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Plastic package has Underwriters Laboratory
TO-220AC
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
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Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency
Low forward voltage, high current capability
High surge capacity
Super fast recovery times, high voltage
Epitaxial chip construction
MECHANICAL DATA
Case: TO-220AC molded plastic
Terminals: Lead, solderable per MIL-STD-202, Method 208
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, Resistive or inductive load.
For capacitive load, derate current by 20%.
ER1000
ER1001
ER1001A
ER1002
ER1003
ER1004
UNITS
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at T
C
=100
Peak Forward Surge Current,
8.3ms single half sine-wave superimposed
on rated load(JEDEC method)
50
35
50
100
70
100
150
105
150
10
150
0.95
10
500
62
35
200
140
200
300
210
300
400
320
400
Maximum Forward Voltage at 10.0A per
element
Maximum DC Reverse Current at Rated
T
a
=25
DC Blocking Voltage per element T
a
=125
Typical Junction capacitance (Note 1)
Maximum Reverse Recovery Time(Note 2)
Typical Thermal Resistance(Note 3) R JC
Operating and Storage Temperature Range T
J
1.30
V
A
P
F
50
3.0
-55 to +150
ns
/W
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A
3. Thermal resistance junction to CASE
RATING AND CHARACTERISTIC CURVES
ER1000 THRU ER1004
Fig. 1-FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
Fig. 4-MAXIMUM NON-REPETITIVE SURGE CURRENT
Fig. 3-TYPICAL REVERSE
CHARACTERISTICS
Fig. 5-TYPICAL JUNCTION CAPACITANCE
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参数对比
与ER1003相近的元器件有:ER1000、ER1001、ER1001A、ER1002、ER1004。描述及对比如下:
型号 ER1003 ER1000 ER1001 ER1001A ER1002 ER1004
描述 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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