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ER1A

THRU

ER1J

SUPER FAST RECOVERY GLASS PASSIVATED RECTIFIER

he plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

or surface mounted applications

Super fast switching for high efficiency

ow reverse leakage

uilt-in strain relief,ideal for automated placement

igh forward surge current capability

igh temperature soldering guaranteed:

50 C/10 seconds at terminals

Case:

JEDEC DO-214AA molded plastic bod y

Terminals:

Solder Plated , solderable per

MIL-STD-750,Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:0.005

ounce, 0.138 grams

Characteristic

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

=55 C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

=25 C

at rated DC blocking voltage

=100 C

Maximum reverse recovery time

(NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

SYMBOLS

ER1A ER1B

ER1C ER1D ER1E

ER1G ER1J

UNITS

VOLTS

Amp

RRM

RMS

(AV)

100

150

105

150

200

140

200

1.0

300

210

300

400

280

400

600

420

600

FSM

STG

0.95

30.0

Amps

1.25

5.0

50.0

15.0

60.0

-65 to +150

1.70

Volts

C/W

Note:1.Reverse

recovery condition I

=0.5A,I

=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2 (5.0x5.0mm) copper pad areas

RATINGS AND CHARACTERISTIC CURVES ER1A THRU ER1J

FIG. 1- FORWARD CURRENT DERATING CURVE

1.0

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

0.8

0.6

0.4

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

0.2

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method) T

=25 C

100

125

150

175

5.0

100

LEAD

TEMPERATURE, C

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

100

1,000

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

ER1A-ER1D

ER1E-ER1G

ER1J

0.1

TJ=100 C

0.01

0.4

0.8

1.2

1.6

2.0

2.4

0.1

TJ=25 C

0.01

100

INSTANTANEOUS FORWARD VOLEAGE,

VOLTS

=25 C

PULSE WIDTH=300 m

1%DUTY CYCLE

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 5-TYPICAL JUNCTION CAPACITANCE

200

100

=25 C

100

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

0.1

0.01

0.1

1.0

100

0.1

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

参数对比

与ER1G相近的元器件有：LMP92018_14、ER1J、ER1A、ER1E。描述及对比如下：

型号	ER1G	LMP92018_14	ER1J	ER1A	ER1E
描述	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN	LMP92018 Analog System Monitor and Controller	Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN	Rectifier Diode, 1 Element, 1A, 300V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
厂商名称	Daco Semiconductor Co Ltd	-	Daco Semiconductor Co Ltd	Daco Semiconductor Co Ltd	Daco Semiconductor Co Ltd
包装说明	R-PDSO-C2	-	R-PDSO-C2	PLASTIC, SMB, 2 PIN	R-PDSO-C2
Reach Compliance Code	unknown	-	unknown	unknown	unknown
ECCN代码	EAR99	-	EAR99	EAR99	EAR99
Base Number Matches	1	-	1	1	1
配置	-	-	SINGLE	SINGLE	SINGLE
二极管元件材料	-	-	SILICON	SILICON	SILICON
二极管类型	-	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	-	-	DO-214AA	DO-214AA	DO-214AA
JESD-30 代码	-	-	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
元件数量	-	-	1	1	1
端子数量	-	-	2	2	2
最高工作温度	-	-	150 °C	150 °C	150 °C
最低工作温度	-	-	-65 °C	-65 °C	-65 °C
最大输出电流	-	-	1 A	1 A	1 A
封装主体材料	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
最大重复峰值反向电压	-	-	600 V	50 V	300 V
最大反向恢复时间	-	-	0.035 µs	0.035 µs	0.035 µs
表面贴装	-	-	YES	YES	YES
端子形式	-	-	C BEND	C BEND	C BEND
端子位置	-	-	DUAL	DUAL	DUAL