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ER1G-T3

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Sangdest Microelectronics (Nanjing) Co Ltd

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Sangdest Microelectronics (Nanjing) Co Ltd
包装说明
R-PDSO-C2
Reach Compliance Code
unknow
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
湿度敏感等级
1
元件数量
1
端子数量
2
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
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I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
Single phase half wave
Resistive or Inductive load
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.00
10
T
j
= 25
°
C
Pulse width = 300
µ
s
0.75
ER1A - ER1D
ER1E - ER1G
1.0
0.50
ER1J
0.1
0.25
0
0
25
50
75
100
125
150
175
T
L
, LEAD TEMPERATURE
(
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1.0MHz
20
C
j
, CAPACITANCE (pF)
10
10
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
NI (Non-inductive)
10
NI
100
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
ER1A – ER1J
2
of 2
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SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
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