BL
GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIER
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
ER3AB--- ER3JB
VOLTAGE RANGE:
50
--- 600 V
CURRENT:
3.0
A
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
½½½½（½½）
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER3AB ER3BB ER3CB ER3DB ER3EB ER3GB ER3JB UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@
3.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(Note 2)
(Note 3)
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
3.0
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
0.95
100
A
1.25
5.0
300
35
95
40
- 55 ----- + 150
- 55 ----- + 150
1.7
V
A
ns
pF
/W
Maximum reverse recovery time (Note 1)
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Document Number 0280025
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
50
N 1.
10
N 1.
t
rr
ER3AB --- ER3JB
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
0
PULSE
GENERATOR
(NOTE2)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD
4.0
ER3EB -
ER3GB
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
3.0
2.5
2.0
1.5
1.0
0.5
0
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
z
CURRENT,AMPERES
3.0
ER3AB - ER3DB
ER3JB
2.0
T
J
=25
Pulse Width=300
µ
s
1.0
0.4
0.8
1.2
1.6
2.0
2.4
0
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
1000
600
400
200
100
60
40
20
10
T
J
=25
f=1.0MHz
PEAK FORWARD SURGE
CURRENT,AMPERES
120
100
80
60
40
20
0
1
2
5
10
20
50
100
8.3m Single Half
s
Sine-W
ave
0.1 0.2 0.4
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
1000
100
T
J
=100
10
T
J
=75
1 .0
T
J
=25
0 .1
0 .0 1
0
20
40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE.
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Document Number 0280025
BL
GALAXY ELECTRICAL
2.
PCB设计
