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ERA32-02

Rectifier Diode, 1 Element, 1A, 200V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Galaxy Semi-Conductor Co Ltd
Reach Compliance Code
unknown
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.92 V
最大非重复峰值正向电流
40 A
元件数量
1
最高工作温度
150 °C
最大输出电流
1 A
最大重复峰值反向电压
200 V
最大反向恢复时间
0.05 µs
表面贴装
NO
文档预览
BL
FEATURES
GALAXY ELECTRICAL
ERA32-01 --- ERA32-02
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 41
MECHANICAL DATA
Case:JEDEC DO--41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERA32 - 01
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERA32 - 02
200
140
200
1.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
V
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0262018
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
ERA32-01 -- ERA32-02
FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N1.
10
N1.
+0.5A
t
rr
D .T
.U .
(+
)
25V C
D
(approx)
(-)
1
NN -
O IN
D C IV
UT E
(+
)
0
P LS
U E
GNRT R
E E AO
(N T 2)
OE
OC S OE
S ILLO C P
(N TE1)
O
(-)
-0 .2 5 A
-1 .0 A
1cm
FIG.3 --FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT.
FIG.4--TYPICAL JUNCTION CAPACITANCE
1.4
1.2
1
0.8
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
AMPERES
0.6
0.4
0.2
0
0
Single Phase
Half W ave 60Hz
Resistive or
Inductive Load
4
    
T
J
=25
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
20
40
60
80
100
120 140
150
AMBIENT TEMPERATURE.
REVERSE VOLTAGE,VOLTS
40
T
J
=125
8.3ms Single Half
Sine-Wave
INSTANTANEOUS FORWARD CURRENT
FIG.5--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT.
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
10
30
AMPERES
20
AMPERES
1.0
0.1
T
J
=25
Pulse Width=300
µ
S
10
0
1
2
4
8 10
20
40 60 80 100
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
www.galaxycn.com
Document Number 0262018
BL
GALAXY ELECTRICAL
2.
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