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ES1BL R3G

DIODE GEN PURP 100V 1A SUB SMA

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
二极管类型
标准
电压 - DC 反向(Vr)(最大值)
100V
电流 - 平均整流(Io)
1A
不同 If 时的电压 - 正向(Vf
950mV @ 1A
速度
快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)
35ns
不同 Vr 时的电流 - 反向漏电流
5µA @ 100V
不同 Vr,F 时的电容
10pF @ 4V,1MHz
安装类型
表面贴装
封装/外壳
DO-219AB
供应商器件封装
Sub SMA
工作温度 - 结
-55°C ~ 150°C
文档预览
ES1AL - ES1JL
Taiwan Semiconductor
CREAT BY ART
1A, 50V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied V
R
=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
T
J
T
STG
10
35
35
85
- 55 to +150
- 55 to +150
0.95
5
100
8
SYMBOL
ES
1AL
EAL
50
35
50
ES
1BL
EBL
100
70
100
ES
1CL
ECL
150
105
150
ES
1DL
EDL
200
140
200
1
30
1.3
1.7
ES
1FL
EFL
300
210
300
ES
1GL
EGL
400
280
400
ES
1HL
EHL
500
350
500
ES
1JL
EJL
600
420
600
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
UNIT
Document Number: DS_D1410026
Version: K15
ES1AL - ES1JL
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
RU
RV
RT
MT
RQ
MQ
R3
RF
R2
M2
RH
MH
Note 1: "x" defines voltage from 50V (ES1AL) to 600V (ES1JL)
PACKING CODE
PACKING CODE
SUFFIX
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
1,800 / 7" Plastic reel (8mm tape)
3,000 / 7" Plastic reel (8mm tape)
7,500 / 13" Paper reel (8mm tape)
7,500 / 13" Plastic reel (8mm tape)
10,000 / 13" Paper reel (8mm tape)
10,000 / 13" Plastic reel (8mm tape)
1,800 / 7" Plastic reel (12mm tape)
3,000 / 7" Plastic reel (12mm tape)
7,500 / 13" Paper reel (12mm tape)
7,500 / 13" Plastic reel (12mm tape)
10,000 / 13" Paper reel (12mm tape)
10,000 / 13" Plastic reel (12mm tape)
PACKAGE
PACKING
ES1xL
(Note 1)
H
G
EXAMPLE
PREFERRED P/N
ES1JLHRUG
PART NO.
ES1JL
PART NO.
SUFFIX
H
PACKING CODE
RU
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT (A)
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
(A)
100
Pulse Width=300μs
1% Duty Cycle
ES1HL-ES1JL
10
ES1FL-ES1GL
ES1AL-ES1DL
1.2
1
0.8
0.6
0.4
0.2
0
80
90
100
110
120
130
140
150
LEAD TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVE LOAD
1
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
PEAK FORWARD SURGE CURRENT
(A)
INSTANTANEOUS REVERSE CURRENT
(μA)
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
1000
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
8.3ms Single Half Sine Wave
T
J
=125°C
10
T
J
=75°C
1
0.1
0.01
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
T
J
=25°C
Document Number: DS_D1410026
Version: K15
ES1AL - ES1JL
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
14
12
CAPACITANCE (pF)
10
8
6
ES1FL-ES1JL
4
2
0
1
10
REVERSE VOLTAGE (V)
100
f=1.0MHz
Vsig=50mVp-p
ES1AL-ES1DL
PACKAGE OUTLINE DIMENSIONS
Sub SMA
DIM.
B
C
D
E
F
G
H
I
J
Unit (mm)
Min
1.70
2.70
0.16
1.23
0.80
3.40
2.45
0.35
0.00
Max
1.90
2.90
0.30
1.43
1.20
3.80
2.60
0.85
0.10
Unit (inch)
Min
0.067
0.106
0.006
0.048
0.031
0.134
0.096
0.014
0.000
Max
0.075
0.114
0.012
0.056
0.047
0.150
0.102
0.033
0.004
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.4
1.2
3.1
1.9
4.3
Unit (inch)
0.055
0.047
0.122
0.075
0.169
MARKING DIAGRAM
P/N
G
YW
F
Document Number: DS_D1410026
= Marking Code
= Green compound Code
= Date Code
= Factory Code
Version: K15
ES1AL - ES1JL
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410026
Version: K15
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