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ES1D

1 A, 200 V, SILICON, SIGNAL DIODE
1 A, 200 V, 硅, 信号二极管

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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器件:ES1D

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
塑料, SMA, 2 PIN
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
PURE 锡
端子位置
包装材料
塑料/环氧树脂
结构
单一的
二极管元件材料
二极管类型
信号二极管
反向恢复时间最大
0.0200 us
最大重复峰值反向电压
200 V
最大平均正向电流
1 A
文档预览
ES1A - ES1G
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
A
B
Dim
A
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
Mechanical Data
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code: See Below
Ordering Information: See Below
Weight: 0.064 grams (approx.)
C
B
C
D
E
G
H
D
J
H
G
E
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 110°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 3)
Operating and Storage Temperature Range
@ I
F
= 0.6A
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
qJT
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
ES1A
50
35
ES1B
100
70
ES1C
150
105
1.0
30
0.90
0.98
5.0
200
20
10
40
-65 to +150
ES1D
200
140
ES1G
400
280
Unit
V
V
A
A
¾
1.25
V
mA
ns
pF
°C/W
°C
Ordering Information
Device*
ES1x-13
Notes:
(Note 4)
Packaging
SMA
Shipping
5000/Tape & Reel
1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pad as heat sink.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*x = Device type, e.g. ES1A-13.
Marking Information
YWW
XXXX
DS14001 Rev. 8 - 2
XXXX = Product type marking code, ex. ES1A
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
1 of 2
ES1A - ES1G
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.5
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
ES1A - ES1D
ES1G
1.0
1.0
0.5
0.1
T
j
= 25
°
C
I
F
Pulse Width: 300
µ
s
0
25
50
75
100
125
150
175
T
T
, TERMINAL TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.01
0
0.4
0.8
1.2
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
Single Half-Sine-Wave
(JEDEC Method)
I
R
, INSTANTANEOUS REVERSE CURRENT (
µ
A)
100
T
j
= 100
°
C
20
10
10
1.0
T
j
= 25
°
C
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Surge Current Derating Curve
100
0.1
0
40
80
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
t
rr
+0.5A
50
NI (Non-inductive)
Device
Under
Test
10
NI
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
DS14001 Rev. 8 - 2
2 of 2
ES1A - ES1G
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参数对比
与ES1D相近的元器件有:ES1B、ES1C。描述及对比如下:
型号 ES1D ES1B ES1C
描述 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
端子数量 2 2 2
元件数量 1 1 1
加工封装描述 塑料, SMA, 2 PIN 绿色, 塑料, SMA, 2 PIN SMA, 2 PIN
状态 ACTIVE ACTIVE ACTIVE
包装形状 矩形的 矩形的 RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes
端子形式 C BEND C BEND C BEND
端子涂层 PURE 锡 PURE 锡 MATTE TIN
端子位置 DUAL
包装材料 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY
结构 单一的 单一的 SINGLE
二极管元件材料 SILICON
二极管类型 信号二极管 信号二极管 SIGNAL DIODE
反向恢复时间最大 0.0200 us 0.0350 us 0.0150 us
最大重复峰值反向电压 200 V 100 V 150 V
最大平均正向电流 1 A 1 A 1 A
无铅 Yes - Yes
欧盟RoHS规范 Yes - Yes
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