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ES1D

Rectifiers 1.0a Rectifier UF Recovery

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-C2
制造商包装代码
403AE
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
1 week
Samacsys Confidence
3
Samacsys Status
Released
Samacsys PartID
1057998
Samacsys Pin Count
2
Samacsys Part Category
Diode
Samacsys Package Category
Diodes Moulded
Samacsys Footprint Name
ES1C
Samacsys Released Date
2019-08-09 08:27:00
Is Samacsys
N
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.92 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
1.47 W
认证状态
Not Qualified
最大重复峰值反向电压
200 V
最大反向恢复时间
0.015 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
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Please
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ES1A - ES1D
ES1A - ES1D
Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for
high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
A
=120°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
Value
1A
50
1B
100
1C
150
1.0
30
-50 to +150
-50 to +150
1D
200
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
R
θJL
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
Parameter
Value
1.47
85
35
Units
W
°C/W
°C/W
*
Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
1A
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
RR
= 0.25 A
Reverse Current @ rated V
R
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
Device
1B
0.92
15
T
A
= 25°C
T
A
= 100°C
5.0
100
7.0
1C
1D
Units
V
ns
µA
µA
pF
2010
Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. C1
ES1A - ES1D
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1.5
1.25
1
0.75
0.5
0.25
0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
10
Forward Current, I
F
[A]
1
0.1
0.01
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
0
25
50
75
100
125
Ambient Temperature [ºC]
150
175
0.001
0.4
0.6
0.8
1
1.2
Forward Voltage, V
F
[V]
1.4
Figure 1. Forward Current Derating Curve
30
25
20
15
10
5
0
Figure 2. Forward Voltage Characteristics
1000
Peak Forward Surge Current, I
FSM
[A]
Reverse Current, I
R
[uA]
100
T
A
= 125
º
C
10
T
A
= 75
º
C
1
T
A
= 25
º
C
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0.1
0
40
60
80
100
120
140
20
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Non-Repetitive Surge Current
14
Total Capacitance, C
T
[pF]
12
10
8
6
4
2
0
0.1
Figure 4. Reverse Current vs Reverse Voltage
1
10
Reverse Voltage, V
R
[V]
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2010
Fairchild Semiconductor Corporation
ES1A-ES1D, Rev. C1
B
B
5.60
4.80
0.13
M
C B A
2.65
B
1.65
1.20
1.75
4.30
LAND PATTERN RECOMMENDATION
2.95
2.50
A
2.50 MAX
4.75
4.00
TOP VIEW
B
A
2.20
1.90
0.203
0.050
0.30
0.05
0.13
M
C B A
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
B DOES NOT COMPLY JEDEC STANDARD
VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5-2009.
E. LAND PATTERN STD. DIOM5025X231M
F. DRAWING FILENAME: MKT-DO214ACrev2
C
B
2.05
1.95
SIDE VIEW
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
DETAIL A
SCALE 20 : 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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www.onsemi.com
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