首页 > 器件类别 > 分立半导体 > 二极管

ES1F

1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 300 V, 硅, 信号二极管, DO-214交流

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
ES1F 在线购买

供应商:

器件:ES1F

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
GREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
湿度敏感等级
1
最大非重复峰值正向电流
30 A
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
最大重复峰值反向电压
300 V
最大反向恢复时间
0.035 µs
表面贴装
YES
端子面层
Pure Tin (Sn)
端子形式
C BEND
端子位置
DUAL
Base Number Matches
1
文档预览
ES1A
THRU
ES1J
1.0 AMP. Super Fast Surface Mount Rectifiers
Voltage Range
50 to 600 Volts
Current
1.0 Ampere
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
O
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-O
.062(1.58)
.050(1.27)
SMA/DO-214AC
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.103(2.61)
.078(1.99)
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packing: 12mm tape per E1A STD RS-481
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
Units
Type Number
1A 1B 1C 1D 1F 1G 1H 1J
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
50 100 150 200 300 400 500 600
Maximum RMS Voltage
V
V
RMS
35 70 105 140 210 280 350 420
Maximum DC Blocking Voltage
50 100 150 200 300 400 500 600
V
V
DC
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
I
(AV)
I
FSM
V
F
I
R
0.95
1.0
30
1.3
5.0
100
35
10
85
35
-55 to +150
-55 to + 150
8
1.7
A
A
V
uA
uA
nS
pF
℃/W
Trr
Cj
R
θ
JA
R
θ
JL
T
J
T
STG
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area.
- 166 -
RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
PEAK FORWARD SURGE CURRENT. (A)
1.2
30
8.3ms Single Half Sine Wave
o
(JEDEC Method) at T
L
=120 C
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
AVERAGE FORWARD CURRENT. (A)
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
25
0.8
20
0.6
15
0.4
10
0.2
0
80
90
100
110
120
o
5.0
130
140
150
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
10
100
Tj=125
0
C
1A
-D
ES
1F
-1
G
10
Tj=85
0
C
1
ES
-1
J
0.1
ES
1H
1
Tj=25
0
C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
14
12
10
8.0
6.0
4.0
2.0
0
0
1
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE.(pF)
ES1
A-
D
ES
1F
-J
10
100
REVERSE VOLTAGE. (V)
- 167 -
查看更多>
参数对比
与ES1F相近的元器件有:ES1H。描述及对比如下:
型号 ES1F ES1H
描述 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 500 V, SILICON, SIGNAL DIODE, DO-214AC
是否Rohs认证 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor
包装说明 GREEN, PLASTIC, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Code compliant compli
ECCN代码 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.7 V
JEDEC-95代码 DO-214AC DO-214AC
JESD-30 代码 R-PDSO-C2 R-PDSO-C2
湿度敏感等级 1 1
最大非重复峰值正向电流 30 A 30 A
元件数量 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 300 V 500 V
最大反向恢复时间 0.035 µs 0.035 µs
表面贴装 YES YES
端子面层 Pure Tin (Sn) Pure Tin (Sn)
端子形式 C BEND C BEND
端子位置 DUAL DUAL
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消