SENSITRON
SEMICONDUCTOR
Data Sheet 2621, Rev.
A
Features
ES1A – ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
B
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
A
F
C
H
G
E
Mechanical Data
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Dim
A
B
C
D
E
F
G
H
SMA/DO-214AC
Min Max Min
2.50
4.00
1.40
4.80
2.00
0.76
2.90
4.60
1.60
5.28
2.44
1.52
0.098
0.157
0.055
0.189
0.079
0.030
Max
0.114
0.181
0.063
0.012
0.208
0.096
0.008
0.060
0.152 0.305 0.006
0.051 0.203 0.002
In mm
In inch
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 75°C
@T
A
=25°C unless otherwise specified
Symbol ES1A ES1B ES1C ES1D ES1E ES1G
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
ES1J ES1K ES1M Unit
50
35
100
70
150
105
200
140
300
210
1.0
400
280
600
420
800
560
1000
700
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
R
θJL
T
j,
T
STG
50
0.975
30
1.35
5.0
500
60
45
35
-50 to +150
100
1.60
A
V
µA
nS
pF
K/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
2
3. Mounted on P.C. Board with 8.0mm land area.
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1.00
0.75
0.50
half
Single
phaseInductive load
wave
Resistive or
M
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
T
j
= 25
°
C
Pulse width = 300
µ
s
I
(AV)
, AVERAGE FWD RECTIFIED CURRENT (A)
ES1A - ES1D
ES1E - ES1G
1.0
0.25
ES1J-ES1M
0.1
0
0.01
0
25
75
100
125
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
150 175
,
LEAD
TEMPERATURE (
°
C)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
T
L
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
100
30
8.3
single
half-sine-wave
ms
Pulse
width
(JEDEC method)
T
j
= 25
°
C
f = 1.0MHz
C
j
, CAPACITANCE (pF)
20
10
10
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
100
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
Ω
NI (Non-inductive)
10
Ω
NI
100
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
(+)
50V DC
Approx
-0.25A
(-)
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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