ES2AF THRU ES2JF
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
SMAF
Cathode Band
Top View
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Glass passivated chip junction
0.106(2.70)
0.094(2.40)
0.063(1.60)
0.051(1.30)
0.146(3.7)
0.130(3.3)
0.051(1.30)
0.043(1.10)
0.0091(0.23)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case
: JEDEC SMAF molded plastic body over passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.0018
ounce, 0.064 grams
0.193(4.90)
0.173(4.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
ES2AF ES2BF ES2CF ES2DF ES2EF ES2GF ES2JF
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
2.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
0.95
50.0
1.25
5.0
50.0
35
60.0
40.0
-50 to +150
1.7
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES ES2AF THRU ES2JF
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
2
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
1.6
40
1.2
30
0.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
20
0.4
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
100
1
10
TJ=100 C
1
0.1
ES2AF-ES2DF
ES2EF-ES2GF
ES2JF
0
0.4
0.8
1.2
1.6
1.8
TJ=25 C
0.1
0.01
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200
100
10
10
1
T
J
=25 C
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
MEMS传感器
