TVS Diode
Transient Voltage Suppressor Diodes
ESD207-B1-02 Series
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diodes
ESD207-B1-02ELS
ESD207-B1-02EL
Data Sheet
Revision 1.3, 2013-12-19
Final
Power Management & Multimarket
ESD207-B1-02 Series
Revision History: Revision 1.2, 2013-11-15
Page or Item
5
Subjects (major changes since previous revision)
Table 2-2) updated
Revision 1.3, 2013-12-19
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
FinalData Sheet
2
Revision 1.3, 2013-12-19
ESD207-B1-02 Series
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diodes
1
Ultra Low Clamping Bi-directional ESD / Transient / Surge
Protection Diodes
Features
1.1
•
•
•
•
•
•
ESD / transient / surge protection of one data /
V
bus
line exceding standard:
–
IEC61000-4-2 (ESD): ±30 kV (air / contact discharge)
–
IEC61000-4-4 (EFT): ±50 A (5/50 ns)
–
IEC61000-4-5 (surge): ±8 A (8/20
μs)
Bi-directional, symmetrical working voltage up to
V
RWM
= ±3.3 V
Medium capacitance:
C
L
= 14 pF
(typ.)
Ultra low clamping voltage
V
CL
= 7 V
(typ.) @
I
PP
= 16 A (TLP)
Ultra low dynamic resistance
R
DYN
= 0.13
Ω
typ.
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
Application Examples
Audio Line, Speaker, Headset, Microphone Protection
Human Interface Devices (Keyboard, Touchpad, Buttons)
1.3
Product Description
Pin 1
Pin 2
Pin 1
Pin 1 marking
(lasered)
TSLP-2
Pin 1
TSSLP-2
Pin 2
Pin 2
a) Pin configuration
b) Schematic diagram
P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. vs d
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Type
ESD207-B1-02ELS
ESD207-B1-02EL
Ordering Information
Package
TSSLP-2-3
TSLP-2-19
Configuration
1 line, bi-directional
1 line, bi-directional
Marking code
Y
A
FinalData Sheet
3
Revision 1.3, 2013-12-19
ESD207-B1-02 Series
Characteristics
2
Characteristics
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
1)
Symbol
Min.
Values
Typ.
–
–
–
–
–
Max.
30
8
65
125
150
kV
A
W
°C
°C
–
–
–
-40
-65
Unit
Table 2-1
Parameter
ESD contact discharge
2)
Peak pulse current (
t
p
= 8/20
μs)
3)
Peak pulse power (
t
p
= 8/20
μs)
3)
Operating temperature range
Storage temperature
1) Device is electrically symmetrical
2)
V
ESD
according to IEC61000-4-2
3)
I
PP
according to IEC61000-4-5
V
ESD
I
PP
P
PK
T
OP
T
stg
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Figure 2-1 Definitions of electrical characteristics
FinalData Sheet
4
Revision 1.3, 2013-12-19
ESD207-B1-02 Series
Characteristics
Table 2-2
Parameter
DC Characteristics
at
T
A
= 25 °C, unless otherwise specified
1)
Symbol
Min.
Values
Typ.
–
–
–
4.4
Max.
3.3
50
–
–
V
nA
V
V
–
–
3.65
3.65
Unit
Note / Test Condition
Reverse working voltage
Reverse current
Trigger voltage
Holding voltage
1) Device is electrically symmetrical
V
RWM
I
R
V
t1
V
h
V
R
= 3.3 V
I
R
= 10 mA
Table 2-3
Parameter
AC Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Min.
Values
Typ.
14
Max.
20
pF
–
Unit
Note / Test Condition
Line capacitance
Table 2-4
Parameter
Clamping voltage
1)
Pin 1 to GND
Clamping voltage
1)
GND to Pin 1
Clamping voltage
2)
Dynamic resistance
1)
C
L
V
R
= 0 V,
f
= 1 MHz
ESD and Surge Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Min.
Values
Typ.
7
9
7.5
9
4.5
6.8
0.13
Max.
–
–
–
–
5.8
8.1
–
Ω
V
–
–
–
–
–
–
Unit
Note / Test Condition
V
CL
I
TLP
= 16 A
I
TLP
= 30 A
I
TLP
= 16 A
I
TLP
= 30 A
I
PP
= 1 A
I
PP
= 8 A
R
DYN
–
1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP
conditions:
Z
0
= 50
Ω,
t
p
= 100 ns,
t
r ,
= 0.6 ns
, I
TLP
and
V
TLP
averaging window:
t
1
= 30 ns to
t
2
= 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristic between
I
TLP1
= 5 A and
I
TLP2
= 40 A. Please refer to
Application Note AN210
[1]
2)
I
PP
according to IEC61000-4-5 (
t
p
= 8/20 µs)
FinalData Sheet
5
Revision 1.3, 2013-12-19
