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ESD9N5V-MS

厂商名称:美森科(MSKSEMI)

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ESD9N5V-MS
Semiconductor
Compiance
PIN CONFIGURATION
Applications
Cellular phones
Portable devices
Digital cameras
Power supplies
Features
Small Body Outline Dimensions
Low Body Height
Peak Power up to 85 Watts @ 8 x 20
μs
Pulse
Low Leakage current
Response Time is Typically < 1 ns
We declare that the material of product
compliance with RoHS requirements.
DFN1006-2L
Absolute Ratings (T
amb
=25°C )
Symbol
Parameter
Value
Units
P
PP
T
L
T
stg
T
op
T
j
Peak Pulse Power (t
p
= 8/20
μ
s)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
IEC61000-4-2 (ESD)
air discharge
contact discharge
85
260
-55 to +155
-40 to +150
150
±30
W
°C
°C
°C
°C
KV
±30
www.msksemi.com
ESD9N5V-MS
Semiconductor
Compiance
Electrical Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
P
pk
C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Peak Power Dissipation
Capacitance @ V
R
= 0 and f = 1.0 MHz
I
PP
I
T
V
C
V
BR
V
RWM
I
R
I
R
V
RWM
V
BR
V
C
I
T
I
PP
I
V
Bi−Directional TVS
Electrical Characteristics
V
RWM
(V)
I
R
(
mA)
@ V
RWM
Max
0.5
V
BR
(V) @ I
T
(Note 1)
Min
5.6
Max
8
V
C
(V)
@ I
PP
= 1 A
Max
8.5
V
C
(V)
@ I
PP
=
8
A
Max
9
P/N
Max
ESD9N5V-MS
5.0
I
T
mA
1.0
I
PP
(A)
Max
10
P
PK
(W)
Max
85
C (pF)
Max
20
*Surge current waveform per Figure 1.
1. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25
℃.
100
90
80
% of Rated Power
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
Lead Temperature- TL(
)
Peak Pluse Power
8/20µs
Fig1. Pulse Waveform
Fig2.Power Derating Curve
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ESD9N5V-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
Inches
MIN
0.0125
A
B
C
Dim
A
B
C
D
Millimeters
MIN
0.32
0.00
0.95
0.55
0.40
0.20
MAX
0.02
MAX
0.52
0.05
1.080
0.680
0.60
0.30
0.000
0.037
0.022
0.016
0.008
0.002
0.043
0.027
0.024
0.012
R
D
E
E
F
H
R
0.015Typ.
0.001
0.005
0.40Typ.
0.05
0.15
F
H
1.20
0.50
0.60
0.70
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
REEL SPECIFICATION
P/N
ESD9N5V-MS
PKG
DFN1006-2L
QTY
10000
www.msksemi.com
ESD9N5V-MS
Semiconductor
Compiance
Attention
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
circuitsfor safedesign, redundant design, and structural design.
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from theauthorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written permission of MSKSEMI Semiconductor.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the
MSKSEMI Semiconductor productthat you intend to use.
www.msksemi.com
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