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ESDALC6V1-5T6

ESD Suppressors / TVS Diodes Low capTransil ESD Protection

器件类别:分立半导体    二极管   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
QFN
包装说明
1 X 1 MM, ROHS COMPLIANT, MICRO QFN-6
针数
6
Reach Compliance Code
compliant
ECCN代码
EAR99
最大击穿电压
7.2 V
最小击穿电压
6.1 V
击穿电压标称值
6.65 V
配置
SEPARATE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-N6
最大非重复峰值反向功率耗散
25 W
元件数量
2
端子数量
6
最高工作温度
125 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
认证状态
Not Qualified
表面贴装
YES
技术
AVALANCHE
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
ESDALC6V1-5T6
Low capacitance Transil™ arrays for ESD protection
Features
5 unidirectional Transil diodes
Breakdown voltage V
BR
= 6.1 V min.
Low diode capacitance: 7 pF typ.
Low leakage current < 100 nA
Very small PCB area: 1.0 mm²
350 µm pitch micro-package
Lead-free and RoHS package
Figure 1.
Micro DFN package
1.0 x 1.0-6L
Complies with the following standards
Functional diagram (top view)
IEC 61000-4-2:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G- Method 3015-7: class3B:
– >8 kV (human body model)
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Cellular phone handsets and accessories
Computers
Printers
Communication systems
Video equipment
Set top boxes
Description
The ESDALC6V1-5T6 is monolithic arrays
designed to protect up to 5 lines against ESD
transients.
The device is ideal for applications where both
reduced print circuit board space and high ESD
protection level are required.
TM:
Transil is a trademark of STMicroelectronics
March 2011
Doc ID 16741 Rev 2
1/11
www.st.com
11
Characteristics
ESDALC6V1-5T6
1
Characteristics
Table 1.
Symbol
V
PP
P
PP
I
pp
T
j
T
stg
T
L
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
ESD IEC 61000-4-2, air discharge
ESD IEC 61000-4-2, contact discharge
Peak pulse power dissipation (8/20 µs)
(1)
T
j
initial = T
amb
Value
15
8
25
2
125
-55 + 150
260
Unit
kV
W
A
°C
°C
°C
Repetitive peak pulse current typical value (8/20 µs)
Junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2.
Electrical characteristics (definitions)
I
I
F
Symbol
V
BR
=
I
RM
=
V
RM
=
Parameter
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
V
F
V
CL
V
BR
V
RM
I
RM
V
Slope: 1/R
d
I
PP
Table 2.
Symbol
V
BR
I
RM
C
Electrical characteristics (values, T
amb
= 25 °C)
Test conditions
I
R
= 1 mA
V
RM
= 3 V
V
R
= 3 V DC, F
osc
= 1 MHz, V
osc
= 30 mV rms
7
Min.
6.1
Typ.
Max.
7.2
100
9
Unit
V
nA
pF
2/11
Doc ID 16741 Rev 2
ESDALC6V1-5T6
Characteristics
Figure 3.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
P
PP
[T
j
initial]/P
PP
[T
j
initial = 25 °C]
1000
P
PP
(W)
T
j
initial = 25 °C
100
10
Tj(°C)
0
25
50
75
100
125
150
1
t
p
(µs)
1
10
100
1000
Figure 5.
Clamping voltage versus peak
pulse current (typical values,
exponential waveform)
Figure 6.
Forward voltage drop versus peak
forward current (typical values)
10.0
I
PP
(A)
Wave 8/20 µs T= 25 °C
10.00
I
FM
(A)
1.00
1.0
0.10
0.01
0.1
5
6
7
8
9
10
11
V
CL
(V)
12
13
0.00
0.00
V
FM
(V)
0.50
1.00
1.50
2.00
2.50
3.00
Figure 7.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 8.
Relative variation of leakage
current versus junction
temperature (typical values)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
C (pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
J
= 25 °C
100
I
R
[T
j
] / I
R
[T
j
= 25 °C]
V
R
= 3 V
IO/GND
IO/IO
10
V
0
1
2
3
4
5
1
25
50
75
100
T
j
(°C)
125
Doc ID 16741 Rev 2
3/11
Ordering information scheme
ESDALC6V1-5T6
Figure 9.
dB
S21 attenuation measurement
results of each channel
Figure 10. Analog crosstalk measurements
between channels
0.00
-20.00
-40.00
0.00
dB
-5.00
-10.00
-60.00
-15.00
-80.00
-20.00
-100.00
-25.00
-120.00
-30.00
100.0K
1.0M
10.0M
100.0M
1.0G
F/Hz
-140.00
100.0K
1.0M
10.0M
100.0M
1.0G
F/Hz
Figure 11. ESD response to IEC 61000-4-2
(+15 kV air discharge) on each
channel
10 V/Div
Figure 12. ESD response to IEC 61000-4-2
(-15 kV air discharge) on each
channel
5 V/Div
C2
C2
100 ns/Div
100 ns/Div
2
Ordering information scheme
Figure 13. Ordering information scheme
ESDA LC
ESD array
Low capacitance
Breakdown voltage
6V1 = 6.1 Volts min
Package
5 = 5 lines
T = Micro DFN, pitch 0.35 mm
6 = 6 pads
6V1
5T6
4/11
Doc ID 16741 Rev 2
ESDALC6V1-5T6
Package information
3
Package information
Epoxy meets UL94, V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Table 3.
Micro DFN
1.0 x 1.0-6L
dimensions
Dimensions
Ref.
D
Index area
(D/2xE/2)
Millimeters
Min.
Typ.
-
0.02
0.15
1.00
1.00
0.32
0.35
Max.
0.40
0.05
0.20
1.05
1.05
0.42
-
Min.
0.012
0.00
Inches
Typ.
-
Max.
0.016
e
b
0.56
E
Index area
(D/2xE/2)
L=0.36
±0.10
A
A1
b
BOTTOM VIEW
0.31
0.00
0.10
0.95
0.95
0.22
-
PIN#1 ID
0.0008 0.002
L1
TOP VIEW
0.06
0.004 0.006 0.008
0.037 0.039 0.041
0.037 0.039 0.041
0.009 0.012 0.016
-
0.014
-
D
A1
SEATING
PLANE
A
SIDE VIEW
E
L1
e
Figure 14. Footprint dimensions (in mm) Figure 15. Marking
0.175
0.150
0.175
0.520
0.240
K
1.280
0.560
0.375 0.200
0.900
Note:
Product marking may be rotated by multiples of 90° for assembly plant differentiation. In no
case should this product marking be used to orient the component for its placement on a
PCB. Only pin 1 mark is to be used for this purpose.
0.520
Pin 1
Doc ID 16741 Rev 2
5/11
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