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ESH2BAHF2G

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
R-PDSO-C2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW POWER LOSS
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
参考标准
AEC-Q101
最大重复峰值反向电压
100 V
最大反向恢复时间
0.025 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
ESH2BA - ESH2DA
Taiwan Semiconductor
CREAT BY ART
2A, 100V - 200V Surface Mount Ultra Fast Rectifiers
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Ultra fast recovery time for high efficiency
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.07 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
T
J
=25°C
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Pulse energy in avalanche mode, non repetitive
(inductive load switch off), L=120mH
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=100°C
T
J
=125°C
t
rr
E
RSM
C
J
R
θJL
R
θJA
T
J
T
STG
I
R
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
ESH2BA
100
70
100
ESH2CA
150
105
150
1
50
0.90
1
10
50
25
20
25
20
75
- 55 to +175
- 55 to +175
ns
mJ
pF
°C/W
°C
°C
μA
ESH2DA
200
140
200
Unit
V
V
V
A
A
V
Document Number: DS_D1310015
Version: E15
ESH2BA - ESH2DA
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
R3
R2
ESH2xA
(Note 1)
H
M2
F3
F2
F4
Note 1: "xx" defines voltage from 100V (ESH2BA) to 200V (ESH2DA)
*: Optional available
G
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
EXAMPLE
PREFERRED P/N PART NO.
ESH2DAHR3G
ESH2DA
PART NO.
SUFFIX
H
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
1.5
INSTANTANEOUS REVERSE CURRENT
(μA)
1000
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT
(A)
100
T
J
=125°C
10
T
J
=75°C
1
1
0.5
RESISTER OR
INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
LEAD TEMPERATURE (
°
C)
PEAK FORWARD SURGE CURRENT (A)
60
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
INSTANTANEOUS FORWARD CURRENT
(A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
10
1
0.1
Pulse Width=300μs
1% Duty Cycle
0.01
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
Document Number: DS_D1310015
Version: E15
ESH2BA - ESH2DA
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
60
50
CAPACITANCE (pF)
40
30
20
10
0
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1310015
Version: E15
ESH2BA - ESH2DA
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1310015
Version: E15
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参数对比
与ESH2BAHF2G相近的元器件有:ESH2BAHF3G、ESH2BAHM2G、ESH2BAHF4G、ESH2CAHM2G、ESH2CAHF4G、ESH2CAHF3G。描述及对比如下:
型号 ESH2BAHF2G ESH2BAHF3G ESH2BAHM2G ESH2BAHF4G ESH2CAHM2G ESH2CAHF4G ESH2CAHF3G
描述 Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
包装说明 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys N N N N N N N
其他特性 LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1 1
元件数量 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
参考标准 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
最大重复峰值反向电压 100 V 100 V 100 V 100 V 150 V 150 V 150 V
最大反向恢复时间 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.025 µs
表面贴装 YES YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 C BEND C BEND C BEND C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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