SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
FCX589
C
ISSUE 3 - OCTOBER 1995
PARTMARKING DETAIL –
P89
7
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
V
CBO
SYMBOL
VALUE
-50
-30
-5
-2
-1
-200
1
-65 to +150
B
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltages
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Collector -Emitter Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current Transfer
Ratio
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-50
-30
-5
-100
-100
-100
-0.35
-0.65
-1.2
-1.1
MAX.
UNIT
V
V
V
nA
nA
nA
V
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-30V
V
CES
=-30V
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
100
100
80
40
Transition Frequency
Output Capacitance
f
T
C
obo
100
300
I
C
=-1mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
MHz
15
pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT549 datasheet
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V, f=1MHz
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