A Product Line of
Diodes Incorporated
FCX591A
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Features
•
•
•
•
•
•
•
BV
CEO
> -40V
Maximum Continuous Current I
C
= -1A
Low saturation voltage V
CE(sat)
< -500mV @ -1A
Complementary NPN type: FCX491A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Application
•
•
Power MOSFET & IGBT gate driving
Low loss power switching
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin Out
Ordering Information
(Note 4)
Product
FCX591ATA
FCX591A-13R
Notes:
Marking
P2
P2
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P2
P2 = Product Type Marking Code
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FCX591A
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Limit
-40
-40
-7
-1
-2
-200
Unit
V
V
V
A
A
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1
125
10.01
-65 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FCX591A
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
D=0.5
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
0
25
50
75
100
125
150
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FCX591A
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
CES
Min
-40
-40
-7
-
-
-
300
300
250
160
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-100
-100
-100
-
800
-
-
-
-0.2
-0.35
-0.5
-1.1
-1.0
-
10
Unit
V
V
V
nA
nA
nA
DC current transfer Static ratio (Note 8)
h
FE
-
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-on Voltage (Note 8)
Transitional Frequency
Output capacitance
Notes:
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
V
V
V
MHz
pF
-
-
150
-
-
-
-
-
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CB
= -30V
V
EB
= -4V
V
CES
= -30V
I
C
= -1mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, V
CE
= -5V
I
E
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz,
8. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2%.
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FCX591A
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
5 of 7
www.diodes.com
October 2012
© Diodes Incorporated
