SMD Type
Transistors
NPN Silicon Power Switching Transistor
FCX619
Features
2W power dissipation.
6A peak pulse current.
Excellent HFE characteristics up to 6 amps.
Extremely low saturation voltage E.g. 13mv Typ.
Extremely low equivalent on-resistance.
R
CE(sat)
87mÙ at 2.75A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
50
50
5
6
3.0
500
1.5
-55 to +150
Unit
V
V
V
A
A
mA
W
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1
SMD Type
FCX619
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cut-off current
Collector Emitter Cut-Off Current
Emitter cut-off current
Symbol
V
(BR)CBO
I
C
=100ìA
V
(BR)CEO
I
C
=10mA
V
(BR)EBO
I
E
=100ìA
I
CBO
I
CES
I
EBO
V
CB
=40V
V
CE
=40V
V
EB
=4V
Testconditons
Transistors
Min
50
50
5
Typ
190
65
8.3
Max
Unit
V
V
V
100
100
100
13
150
190
240
0.97
0.89
200
300
200
100
-----
100
400
450
400
200
30
165
12
170
750
20
25
220
260
320
1.1
1.0
nA
nA
nA
Collector-emitter saturation voltage *
I
C
=0.1A, I
B
=10mA
V
CE(
sat) I
C
=1A, I
B
=10mA
I
C
=2A, I
B
=50mA
I
C
=2.75A, I
B
=100mA
V
BE(
sat) I
C
=2.75A, I
B
=100mA
V
BE(on
) I
C
=2.75A, V
CE
=2V
I
C
=10mA, V
CE
=2V
I
C
=200mA,V
CE
=2V
I
C
=1A,V
CE
=2V
I
C
=2A,V
CE
=2V
I
C
=6A,V
CE
=2V
I
C
=50mA, V
CE
=10V, f=100MHz
V
CB
=10V, f=1MHz
I
C
=1A, V
CC
=10V
I
B1
=I
B2
=10mA
mV
Base-emitter saturation voltage *
Base-emitter ON voltage *
V
V
DC current gain *
h
FE
Transitional frequency
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
f
T
C
obo
t
(on)
t
(off)
MHz
pF
ns
ns
Marking
Marking
619
2
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