SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
FCX718
C
*
*
*
*
*
2W POWER DISSIPATION
6A Peak Pulse Current
Excellent H
FE
Characteristics up to 6Amps
Extremely Low Saturation Voltage E.g. 16mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
96mΩ at 2.5A
E
C
B
Partmarking Detail -
718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-20
-20
-5
-6
-2.5
-500
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX718
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-16
-130
-145
-0.98
-0.85
300
300
150
35
15
150
475
450
230
70
30
180
21
40
670
30
MHz
pF
ns
ns
MIN.
-20
-20
-5
TYP.
-65
-55
-8.8
-100
-100
-100
-40
-200
-220
-300
-1.1
-0.95
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-15V
V
EB
=-4V
V
CES
=-15V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-200mA*
I
C
=-2.5A, I
B
=-200mA*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-4A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
CC
=-15V, I
C
=-0.75A
I
B1
=I
B2
=15mA
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition
Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
FCX718
TYPICAL CHARACTERISTICS
0.8
+25°C
0.8
IC/IB=50
0.6
0.6
-55°C
+25°C
+100°C
+150°C
0.4
IC/IB=10
IC/IB=50
IC/IB=100
0.4
0.2
0.2
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
900
VCE=2V
IC/IB=50
0.8
750
+100°C
600
450
300
-55°C
+25°C
0.6
04
-55°C
+25°C
+100°C
+150°C
0.2
150
0
1m
0
10m
100m
1
I
C
- Collector Current (A)
10
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.0
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
-55°C
+25°C
+100°C
+150°C
10
1
DC
1s
100ms
10ms
1ms
100µs
0.1
0.01
100m
1
10
100
V
CE
- Collector Emitter Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
