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FD1000FX-90

800 A, 4500 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:Mitsubishi(日本三菱)

厂商官网:http://www.mitsubishielectric.com/semiconductors/

下载文档
器件参数
参数名称
属性值
包装说明
O-XEPF-N2
Reach Compliance Code
unknow
ECCN代码
EAR99
应用
POWER
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
3.5 V
JESD-30 代码
O-XEPF-N2
最大非重复峰值正向电流
20000 A
元件数量
1
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-40 °C
最大输出电流
800 A
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
PRESS FIT
认证状态
Not Qualified
最大重复峰值反向电压
4500 V
表面贴装
YES
端子形式
NO LEAD
端子位置
END
Base Number Matches
1
文档预览
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FX-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
FD1000FX-90
OUTLINE DRAWING
Dimensions in mm
R4
5
9
15°
`'39
CATHODE
φ
60
0.4 MIN
q
I
F(AV)
Average forward current ........................800A
q
V
RRM
Repetitive peak reverse voltage ....................4500V
q
Q
RR
Reverse recovery charge ................. 2000µC
q
Press pack type
φ
60
ANODE
φ
102 MAX
M5
!
0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R(DC)
V
LTDS
Symbol
I
F(RMS)
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave
θ
= 180°, T
f
= 77°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Voltage class
90
4500
4500
3600
3000
Ratings
1250
800
20
1.7
!
10
6
–40 ~ +125
–40 ~ +150
26.5 ~ 43.0
700
Unit
V
V
V
V
Unit
A
A
kA
A
2
s
°C
°C
kN
g
Recommended value 39
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
V
FM
Q
RR
R
th(j-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Test conditions
T
j
= 125°C, V
RRM
Applied
T
j
= 125°C, I
FM
= 2500A, Instantaneous measurement
I
FM
= 800A, d
iF
/d
t
= –30A/µs, V
R
= 150V,
T
j
= 125°C
Junction to fin
Min
Limits
Typ
Max
150
3.5
2000
0.017
Unit
mA
V
µC
°C/W
Aug.1998
0.4 MIN
TYPE
NAME
21 ± 0.5
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FX-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTICS
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
FORWARD VOLTAGE (V)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
10
0
2 3 5 7 10
1
0.020
THERMAL IMPEDANCE (°C/W)
POWER DISSIPATION (W)
T
j
= 125°C
RATED SURGE FORWARD CURRENT
SURGE FORWARD CURRENT (kA)
20
FORWARD CURRENT (A)
16
12
T
j
= 25°C
8
4
0
1
2 3
5 7 10
20 30
50 70100
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM POWER DISSIPATION
CHARACTERISTICS
3200
RESISTIVE, INDUCTIVE LOAD
HALF WAVE,
RECTIFICATION
2800
THREE-PHASE
2400
FULL WAVE
2000
CIRCUIT
1600
1200
800
400
SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT
0.016
0.012
DC CIRCUIT
0.008
0.004
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (S)
0
0
400
800
1200
1600
AVERAGE FORWARD CURRENT (A)
ALLOWABLE FIN TEMPERATURE
VS. AVERAGE FORWARD CURRENT
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS.
JUNCTION TEMPERATURE
7 I
FM
= 800A
5
d
iF
/d
t
= –30A/µs
3
2 V
RM
= 150V
10
3
Q
RR
7
5
3
2
130
120
FIN TEMPERATURE (°C)
RESISTIVE, INDUCTIVE LOAD
SINGLE-PHASE
HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT
DC CIRCUIT
10
4
MAX.
AV.
110
100
90
80
70
HALF WAVE,
THREE-PHASE
V
AK •
i
A
+
0
I
FM
d
iF
/d
t
trr
t
V
RM
10
2
7
5
3
2
7
5
3
2
trr
Irm
Q
RR
= trr
Irm
2
MAX.
AV.
10
1
FULL WAVE
60
RECTIFICATION
CIRCUIT
50
0
400
800
1200
1600
10
0
0
20
40
60
80 100 120 140 160
AVERAGE FORWARD CURRENT (A)
JUNCTION TEMPERATURE (°C)
Aug.1998
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FX-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS.
FORWARD CURRENT
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
REVERSE RECOVERY CHARGE (µC),
REVERSE RECOVERY TIME (µS)
10
4
7
d
iF
/d
t
= –30A/µs
5
V
RM
= 150V
3
T
j
= 125°C
2
MAX.
AV.
trr
MAX.
AV.
Q
RR
= trr
Irm
2
I
FM
d
iF
/d
t
trr
V
RM
Irm
t
REVERSE RECOVERY CHARGE,
REVERSE RECOVERY TIME VS. RATE
OF DECREASE OF REVERSE CURRENT
10
4
7
I
FM
= 800A
5
V
RM
= 150V
3
T
j
= 125°C
2
MAX.
3
10
AV.
7
5
2
10
1
7
5
3
2
I
FM
V
AK
i
A
+
0
d
iF
/d
t
trr
t
V
RM
Q
RR
Q
RR
10
3
7
5
2
10
1
7
5
3
2
MAX.
AV.
trr
V
AK
• i
A
+
0
10
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
FORWARD CURRENT (A)
10
0
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
Irm
Q
RR
= trr Irm
2
RATE OF DECREASE OF REVERSE CURRENT (A/µS)
Aug.1998
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