FDH400 / FDLL400 / FDH444 / FDLL444
Discrete POWER & Signal
Technologies
N
FDH/FDLL 400 / 444
COLOR BAND MARKING
DEVICE
FDLL400
FDLL444
1ST BAND
BROWN
BROWN
2ND BAND
VIOLET
GRAY
DO-35
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
FDH/FDLL 400
FDH/FDLL 444
Value
150
100
200
500
600
1.0
4.0
-65 to +200
175
Units
V
V
mA
mA
mA
A
A
°C
°C
T
stg
T
J
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
FDH/FDLL 400 / 444
500
3.33
300
Units
mW
mW/°C
°C/W
FDH400 / FDLL400 / FDH444 / FDLL444
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
Symbol
B
V
I
R
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage
Reverse Current
FDH/FDLL444
FDH/FDLL400
FDH/FDLL444
FDH/FDLL400
Test Conditions
I
R
= 100
µA
I
R
= 100
µA
V
R
= 100 V
V
R
= 100 V, T
A
= 150°C
V
R
= 150 V
V
R
= 150 V, T
A
= 150°C
I
F
= 200 mA
I
F
= 300 mA
I
F
= 200 mA
I
F
= 300 mA
V
R
= 0, f = 1.0 MHz
Min
150
200
Max
Units
V
V
nA
µA
nA
µA
V
V
V
V
pF
pF
nS
nS
V
F
Forward Voltage
FDH/FDLL444
FDH/FDLL400
C
O
T
RR
Diode Capacitance
FDH/FDLL444
FDH/FDLL400
Reverse Recovery Time
FDH/FDLL444
FDH/FDLL400
50
100
100
100
1.1
1.2
1.0
1.1
2.5
2.0
60
50
I
F
= I
R
= 30 mA, I
rr
= 3.0 mA,
R
L
= 100
Ω
I
F
= I
R
= 30 mA, I
rr
= 3.0 mA,
R
L
= 100
Ω
