Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Features
•
–11 A, –12 V R
DS(ON)
= 9 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 12 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 16 mΩ @ V
GS
= –1.8 V
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
Applications
•
Power management
•
Load switch
•
Battery protection
D
S
D
S
5
6
4
3
2
1
SuperSOT -8
TM
D
D
D
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–12
±
8
(Note 1a)
Units
V
V
A
W
–11
–50
1.8
1.0
0.9
–55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDR842P
Device
FDR842P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDR842P Rev D (W)
FDR842P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= –250
µA
Min
–12
Typ
Max Units
V
Off Characteristics
–4.4
–1
100
–100
–0.4
–0.5
2.7
7
9
12
9
–50
56
5350
2135
1386
17
20
201
161
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –11 A,
57
7
16
–1.5
(Note 2)
mV/°C
µA
nA
nA
V
mV/°C
9
12
16
12
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
–1.5
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V, I
D
= –11 A
V
GS
= –2.5 V, I
D
= –9.5 A
V
GS
= –1.8 V, I
D
= –7.5 A
V
GS
= – 4.5 V, I
D
= –11 A, T
J
=125°C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –11 A
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
A
S
pF
pF
pF
30
35
322
258
80
ns
ns
ns
ns
nC
nC
nC
A
V
Dynamic Characteristics
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V,
I
S
= –1.5 A
Voltage
–0.6
–1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
