FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
November 2005
FDS8960C
Dual N & P-Channel PowerTrench
®
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
•
•
Features
•
Q1:
N-Channel
R
DS(on)
= 0.024Ω @ V
GS
= 10V
R
DS(on)
= 0.032Ω @ V
GS
= 4.5V
•
Q2:
P-Channel
R
DS(on)
= 0.053Ω @ V
GS
= –10V
R
DS(on)
= 0.087Ω @ V
GS
= –4.5V
Fast switching speed
RoHS compliant
7.0A, 35V
–5A, –35V
D1
D
D1
D
D2
D
D
D2
Q2
5
6
Q1
4
3
2
1
SO-8
Pin 1
SO-8
G1
S1
S
G2
S2
G
7
8
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DS(Avalanche)
V
GSS
I
D
P
D
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum)
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 3)
Q1
35
40
±20
7
20
(Note 1a)
(Note 1b)
(Note 1c)
Q2
–35
–40
±25
–5
–20
2
1.6
1
0.9
–55 to +150
Units
V
V
V
A
W
(Note 1a)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
°C/W
°C/W
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS8960C
Device
FDS8960C
Reel Size
13”
Tape width
12mm
Quantity
2500 units
www.fairchildsemi.com
©2005
Fairchild Semiconductor Corporation
FDS8960C Rev C1(W)
FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
E
AS
I
AS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche
Energy (Single Pulse)
Drain-Source Avalanche
Current
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
Test Conditions
V
DD
= 35 V,
I
D
= 7 A, L = 1 mH
Type Min Typ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
35
–35
31
–40
7
–5
Max Units
24.5
12.5
mJ
mJ
A
Drain-Source Avalanche Ratings
V
DD
= –35 V, I
D
=–5 A, L = 1 mH
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSSF
I
GSSR
I
GSSR
I
GSSF
I
D
= 250
μA
V
GS
= 0 V,
I
D
= –250
μA
V
GS
= 0 V,
I
D
= 250
μA,
Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
DS
= 28 V,
V
GS
= 0 V
V
GS
= 0 V
V
DS
= –28 V,
V
GS
= 20 V,
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
V
mV/°C
1
–1
100
–100
100
–100
μA
nA
nA
nA
nA
Gate-Body Leakage, Reverse V
GS
= –20 V,
Gate-Body Leakage, Forward V
GS
= 25 V,
Gate-Body Leakage, Reverse V
GS
= –25 V,
(Note 2)
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
I
D
= 250
μA
V
DS
= V
GS
,
I
D
= –250 µA
V
DS
= V
GS
,
I
D
= 250
μA,
Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 7 A
I
D
= 6 A
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 7 A, T
J
= 125°C
I
D
= –5 A
V
GS
= –10 V,
I
D
= –4 A
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –5 A, T
J
= 125°C
V
DS
= 5 V,
I
D
= 7 A
I
D
=–5 A
V
DS
= –5 V,
Q1
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
1
–1
2
–1.8
–5
4
20
25
29
44
70
61
23
9
570
540
126
113
52
60
2
6
3
–3
V
mV/°C
24
32
37
53
87
79
mΩ
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Q2
Reverse Transfer Capacitance V
DS
= –15 V, V
GS
= 0 V, f = 1.0 MHz
Gate Resistance
f = 1.0 MHz
pF
pF
pF
Ω
FDS8960C Rev C1(W)
www.fairchildsemi.com
FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2
V
DD
= –15 V, I
D
= -1 A,
V
GS
= –10V, R
GEN
= 6
Ω
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 5 V
Q2
V
DS
= –15 V, I
D
= –5 A,V
GS
= –5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
12
5
16
23
20
3
5
5.5
5.7
1.8
1.8
1.8
2
16
22
10
29
37
32
6
10
7.7
8
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= –1.3 A
Q1
I
F
= 7 A, d
iF
/d
t
= 100 A/µs
Q2
I
F
= -5 A, d
iF
/d
t
= 100 A/µs
(Note 2)
(Note 2)
0.8
–0.8
20
17
10
5
1.3
–1.3
1.2
–1.2
A
V
nS
nC
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS8960C Rev C1(W)
www.fairchildsemi.com
FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q1 (N-Channel)
20
2.6
V
GS
= 10V
6.0V
4.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
2.4
2.2
2
V
GS
= 3.5V
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
16
I
D
, DRAIN CURRENT (A)
12
8
4.0V
4.5V
5.0V
6.0V
10V
3.0V
4
0
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.065
I
D
= 3.5A
R
DS(ON)
, ON-RESISTANCE (OHM)
0.055
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
1.4
I
D
= 7A
V
GS
= 10V
0.045
T
A
= 125
o
C
0.035
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
0.025
T
A
= 25
o
C
0.015
2
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 3. On-Resistance Variation with
Temperature.
30
V
DS
= 5V
25
I
D
, DRAIN CURRENT (A)
125
o
C
20
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
1
25
o
C
-55
o
C
0.01
15
0.1
10
5
0.001
0
1.5
2.5
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4.5
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C1(W)
www.fairchildsemi.com
FDS8960C Dual N & P-Channel PowerTrench
®
MOSFET
Typical Characteristics: Q1 (N-Channel)
10
800
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7A
8
V
DS
= 10V
15V
700
f = 1 MHz
V
GS
= 0 V
C
iss
CAPACITANCE (pF)
20V
6
600
500
400
300
4
C
oss
200
100
2
C
rss
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
35
0
0
2
4
6
8
10
12
0
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
100
μ
s
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
40
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
1
10s
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25
o
C
1s
20
0.1
10
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
100
40
I(pk), PEAK TRANSIENT CURRENT (A)
30
I(AS), AVALANCHE CURRENT(A)
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
T
J
= 25 C
o
20
10
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
1
0.01
0.1
1
10
t
AV
, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
FDS8960C Rev C1(W)
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