FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
September 2014
FDZ1323NZ
Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
20 V, 10 A, 13 mΩ
Features
Max r
S1S2(on)
= 13 mΩ at V
GS
= 4.5 V, I
S1S2
= 1 A
Max r
S1S2(on)
= 13 mΩ at V
GS
= 3.8 V, I
S1S2
= 1 A
Max r
S1S2(on)
= 16 mΩ at V
GS
= 3.1 V, I
S1S2
= 1 A
Max r
S1S2(on)
= 18 mΩ at V
GS
= 2.5 V, I
S1S2
= 1 A
Occupies only 3 mm
2
of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.6 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench
®
process with state of the art
“low pitch” WLCSP packaging process, the FDZ1323NZ
minimizes both PCB space and r
S1S2(on)
. This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low r
S1S2(on)
.
Applications
Battery management
Load switch
Battery protection
S1
PIN1
PIN1
G1
S1
G1
S2
S1
G2
S2
TOP
WL-CSP 1.3X2.3
BOTTOM
G2
S2
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
S1S2
V
GS
I
S1S2
P
D
T
J
, T
STG
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current
Power Dissipation
Power Dissipation
-Continuous
-Pulsed
T
A
= 25°C
T
A
= 25°C
(Note 1a)
(Note 1b)
T
A
= 25°C
(Note 1a)
Parameter
Ratings
20
±12
10
40
2
0.5
-55 to +150
Units
V
V
A
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
62
257
°C/W
Package Marking and Ordering Information
Device Marking
EC
Device
FDZ1323NZ
Package
WL-CSP 1.3X2.3
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
I
S1S2
I
GSS
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
V
S1S2
= 16 V, V
GS
= 0 V
V
GS
= ±12 V, V
S1S2
= 0 V
1
±10
μA
μA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
S1S2
, I
S1S2
= 250
μA
V
GS
= 4.5 V, I
S1S2
= 1 A
V
GS
= 3.8 V, I
S1S2
= 1 A
r
S1S2(on)
Static Source1 to Source2 On Resistance V
GS
= 3.1 V, I
S1S2
= 1 A
V
GS
= 2.5 V, I
S1S2
= 1 A
V
GS
= 4.5 V, I
S1S2
= 1 A,T
J
= 125 C
g
FS
Forward Transconductance
V
S1S2
= 5 V, I
S1S2
= 1 A
o
0.4
4.5
5.5
7
8
0.9
9.7
10
11
13
13
9
1.2
13
13
16
18
20
V
mΩ
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
S1S2
= 10 V, V
GS
= 0 V,
f = 1 MHz
1545
269
252
2055
405
380
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source1 Gate Charge
Gate to Source2 “Miller” Charge
V
S1S2
= 10 V, I
S1S2
= 1 A,
V
G1S1
= 4.5 V, V
G2S2
= 0 V
V
S1S2
= 10 V, I
S1S2
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
12
13
34
13
17
1.9
5.4
22
23
54
23
24
ns
ns
ns
ns
nC
nC
nC
Source1 to Source2 Diode Characteristics
I
fss
V
fss
Maximum Continuous Source1 to Source2 Diode Forward Current
Source1 to Source2 Diode Forward
Voltage
V
G1S1
= 0 V, V
G2S2
= 4.5 V,
I
fss
= 1 A
(Note 2)
0.6
1
1.2
A
V
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
a. 62 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 257 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
2
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
I
S1S2
,
SOURCE1 TO SOURCE2
CURRENT (A)
I
S1S2
,
SOURCE1 TO SOURCE2
CURRENT (A)
40
V
G1S1
= 4.5 V
V
G1S1
= 3.8 V
40
V
GS
= 4.5 V
V
GS
= 3.8 V
V
GS
= 2.5 V
30
V
G1S1
= 3.1 V
30
V
GS
= 3.1 V
20
V
G1S1
= 2.5 V
20
V
GS
= 2 V
10
V
G1S1
= 2 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
G2S2
= 4.5 V
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0
0.0
0.2
0.4
0.6
0.8
1.0
V
S1S2
,
SOURCE1 TO SOURCE2 VOLTAGE (V)
V
S1S2
,
SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On-Region Characteristics
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
Figure 2. On-Region Characteristics
2.0
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
2.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
G2S2
= 4.5 V
V
GS
= 2 V
1.5
V
G1S1
= 2 V
V
G1S1
= 2.5 V
1.5
V
GS
= 2.5 V
V
GS
= 3.1 V
1.0
V
G1S1
= 3.1 V
V
G1S1
= 3.8 V
V
G1S1
= 4.5 V
1.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.8 V
V
GS
= 4.5 V
0.5
0
10
20
30
40
I
S1S2
,
SOURCE1 TO SOURCE2
CURRENT (A)
0.5
0
10
20
30
40
I
S1S2
,
SOURCE1 TO SOURCE2
CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
60
SOURCE2 ON-RESISTANCE
(
m
Ω
)
1.6
1.4
1.2
1.0
0.8
0.6
-75
I
S1S2
= 1 A
V
GS
= 4.5 V
r
S1S2(on),
SOURCE1 TO
50
40
30
20
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
S1S2
= 1 A
T
J
= 125
o
C
T
J
= 25
o
C
-50
-25
0
25
50
75
100 125 150
0
1.0
1.5
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
2.0
2.5
3.0
3.5
4.0
V
GS
,
GATE TO SOURCE VOLTAGE (V)
4.5
Figure 5. Normalized On Resistance
vs Junction Temperature
Figure 6. On Resistance vs Gate to
Source Voltage
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
3
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
I
S1S2
, SOURCE1 TO SOURCE2 CURRENT (A)
40
I
fss
, SOURCE1 TO
SOURCE2 FORWARD CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
V
G1S1
= 0 V, V
G2S2
= 4.5 V
30
V
S1S2
= 5 V
T
J
= 150
o
C
10
T
J
= 150
o
C
20
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 25
o
C
1
T
J
= -55
o
C
10
0
0.5
1.0
1.5
2.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
fss
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
5000
V
G1S1
, GATE1 TO SOURCE1 VOLTAGE (V)
4.5
V
G2S2
= 0 V
I
S1S2
= 1 A
V
S1S2
= 8 V
C
iss
CAPACITANCE (pF)
3.0
V
S1S2
= 10 V
1000
C
oss
1.5
V
S1S2
= 12 V
C
rss
f = 1 MHz
V
GS
= 0 V
0.0
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
100
0.1
1
10
20
V
S1S2
, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Gate Charge Characteristics
10
I
g
,
GATE LEAKAGE CURRENT (A)
-1
-2
-3
-4
-5
-6
-7
-8
-9
Figure 10. Capacitance vs Source1
to Source2 Voltage
I
S1S2
, SOURCE1 TO SOURCE2 CURRENT (A)
50
10
10
10
10
10
10
10
10
10
10
V
S1S2
= 0 V
T
J
= 125
o
C
1
THIS AREA IS
LIMITED BY r
DS(on)
1 ms
10 ms
100 ms
CURVE BENT TO
MEASURED DATA
1s
10 s
DC
T
J
= 25
o
C
0.1
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 257
o
C/W
T
A
= 25
o
C
-10
0
3
6
9
12
15
0.01
0.01
0.1
1
10
100
V
GS,
GATE TO SOURCE VOLTAGE (V)
V
S1S2
, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 11. Gate Leakage Current
vs Gate to Source Voltage
Figure 12. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
4
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench
®
WL-CSP MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
P
(PK)
,
PEAK TRANSIENT POWER (W)
10
SINGLE PULSE
R
θ
JA
= 257
o
C/W
1
0.4
-3
10
T
A
= 25
o
C
10
-2
10
-1
10
0
10
1
100
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
SINGLE PULSE
R
θ
JA
= 257 C/W
(
Note 1b
)
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
-4
10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
5
www.fairchildsemi.com
