FESE8xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
2
1
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
FESE8xT
PIN 1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
8.0 A
50 V to 600 V
125 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
MECHANICAL DATA
Case:
TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
0.95 V, 1.30 V, 1.50 V
150 °C
TO-220AC
Single die
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse
voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward
rectified current at T
C
= 100 °C
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Operating storage and
temperature range
SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
50
35
50
100
70
100
150
105
150
200
140
200
8.0
125
-55 to +150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C
Revision: 23-Feb-16
Document Number: 87916
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
F
T
C
= 25 °C
I
R
T
C
= 100 °C
I
F
= 0.5 A, I
R
= 1.0
I
rr
= 0.25 A
4.0 V, 1 MHz
t
rr
C
J
35
85
500
50
50
ns
pF
0.95
10
μA
1.3
1.5
V
Max. instantaneous
8.0 A
forward voltage
(1)
Max. DC reverse
current at rated DC
blocking voltage
Max. reverse
recovery time
Typical junction
capacitance
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
from junction to case
SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
R
JC
2.2
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
PREFERRED P/N
FESE8JT-E3/45
UNIT WEIGHT (g)
1.80
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
Document Number: 87916
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
100
Average Forward Rectified Current (A)
8
Heatsink, Case Temperature, T
C
6
Free Air, Ambient Temperature, T
A
Instantaneous Reverse Leakage
Current (µA)
Resistive or Inductive Load
T
J
= 125 °C
10
1
T
J
= 100 °C
50 - 200 V
500 - 600 V
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
4
2
0
0
50
100
150
Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
150
1000
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
100
75
Junction Capacitance (pF)
125
100
50
25
50 - 200 V
500 - 600 V
10
1
10
100
0.1
1
10
100
0
Number
of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 125 °C
10
T
J
= 25 °C
1
50 - 200 V
300 - 400 V
500 - 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-16
Document Number: 87916
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
0.040 (0.84)
0.024 (0.62)
0.20 (5.08)
PIN 1
PIN 2
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 23-Feb-16
Document Number: 87916
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000