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FESE8HT-E3/45

DIODE GEN PURP 500V 8A TO220AC

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
R-PSFM-T2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
EFFICIENCY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.5 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
125 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
500 V
最大反向电流
10 µA
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
FESE8xT
www.vishay.com
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
TO-220AC
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
2
1
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
FESE8xT
PIN 1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
8.0 A
50 V to 600 V
125 A
35 ns, 50 ns
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variations
MECHANICAL DATA
Case:
TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
0.95 V, 1.30 V, 1.50 V
150 °C
TO-220AC
Single die
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Max. repetitive peak reverse
voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward
rectified current at T
C
= 100 °C
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Operating storage and
temperature range
SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
50
35
50
100
70
100
150
105
150
200
140
200
8.0
125
-55 to +150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C
Revision: 23-Feb-16
Document Number: 87916
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
V
F
T
C
= 25 °C
I
R
T
C
= 100 °C
I
F
= 0.5 A, I
R
= 1.0
I
rr
= 0.25 A
4.0 V, 1 MHz
t
rr
C
J
35
85
500
50
50
ns
pF
0.95
10
μA
1.3
1.5
V
Max. instantaneous
8.0 A
forward voltage
(1)
Max. DC reverse
current at rated DC
blocking voltage
Max. reverse
recovery time
Typical junction
capacitance
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
from junction to case
SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT
R
JC
2.2
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AC
PREFERRED P/N
FESE8JT-E3/45
UNIT WEIGHT (g)
1.80
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
Document Number: 87916
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
100
Average Forward Rectified Current (A)
8
Heatsink, Case Temperature, T
C
6
Free Air, Ambient Temperature, T
A
Instantaneous Reverse Leakage
Current (µA)
Resistive or Inductive Load
T
J
= 125 °C
10
1
T
J
= 100 °C
50 - 200 V
500 - 600 V
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
4
2
0
0
50
100
150
Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
150
1000
T
C
= 100 °C
8.3 ms Single Half Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Peak Forward Surge Current (A)
100
75
Junction Capacitance (pF)
125
100
50
25
50 - 200 V
500 - 600 V
10
1
10
100
0.1
1
10
100
0
Number
of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 5 - Typical Junction Capacitance
100
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
T
J
= 125 °C
10
T
J
= 25 °C
1
50 - 200 V
300 - 400 V
500 - 600 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 23-Feb-16
Document Number: 87916
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FESE8xT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54) MAX.
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
0.260 (6.6)
0.236 (6.0)
0.603 (15.32)
0.573 (14.55)
1
2
0.160 (4.06)
0.140 (3.56)
0.060 (1.50)
0.047 (1.20)
0.560 (14.22)
0.530 (13.46)
0.040 (0.84)
0.024 (0.62)
0.20 (5.08)
PIN 1
PIN 2
CASE
0.022 (0.56)
0.014 (0.36)
Revision: 23-Feb-16
Document Number: 87916
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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参数对比
与FESE8HT-E3/45相近的元器件有:FESE8JT-E3/45。描述及对比如下:
型号 FESE8HT-E3/45 FESE8JT-E3/45
描述 DIODE GEN PURP 500V 8A TO220AC DIODE GEN PURP 600V 8A TO220AC
厂商名称 Vishay(威世) Vishay(威世)
包装说明 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW LEAKAGE CURRENT FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用 EFFICIENCY EFFICIENCY
外壳连接 CATHODE CATHODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.5 V 1.5 V
JEDEC-95代码 TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 125 A 125 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 500 V 600 V
最大反向电流 10 µA 10 µA
最大反向恢复时间 0.05 µs 0.05 µs
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
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