FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Ultrafast Plastic Rectifiers
Reverse Voltage
50 to 600V
Forward Current
8.0 A
Reverse Recovery Time
35 to 50ns
ITO-220AC (FESF8JT)
0.405 (10.27)
0.383 (9.72)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.140 (3.56)
DIA.
0.130 (3.30)
0.131 (3.39)
DIA.
0.122 (3.08)
TO-220AC (FES8JT)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
2
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
CASE
1
0.185 (4.70)
0.175 (4.44)
DIA.
0.055 (1.39)
0.045 (1.14)
0.600 (15.5)
0.580 (14.5)
0.676 (17.2)
0.646 (16.4)
0.350 (8.89)
0.330 (8.38)
PIN
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
PIN 1
PIN 2
0.110 (2.80)
0.100 (2.54)
PIN 1
PIN 2
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
TO-263AB (FESB8JT)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.055 (1.40)
0.047 (1.19)
1
K
2
0.624 (15.85)
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
PIN 1
PIN 2
K - HEATSINK
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout TO-263AB
0.42
(10.66)
0.360 (9.14)
0.320 (8.13)
0.33
(8.38)
0.63
(17.02)
Dimensions in inches
and (millimeters)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.08
(2.032)
0.24
(6.096)
0.095 (2.41)
0.12
(3.05)
0.205 (5.20)
0.195 (4.95)
Features
•
Plastic package has Underwriters Laboratory
•
•
•
•
Flammability Classification 94V-0
Glass passivated chip junction
Low leakage, high voltage
High surge current capability
Superfast recovery time, for high efficiency
Mechanical Data
Case:
JEDEC TO-220AC, ITO-220AC & TO-263AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C, 0.16” (4.06mm) from case for 10 seconds
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
www.vishay.com
1
Document Number 88600
02-Apr-03
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
FES
8GT
FES
8HT
FES
8JT
Unit
V
V
V
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
=100°C
Operating storage and temperature range
RMS Isolation voltage (FESF type only) from
terminals to heatsink with t =1.0 second, RH≤30%
50
35
50
100
70
100
150
105
150
200
140
200
8.0
300
210
300
400
280
400
500
350
500
600
420
600
I
FSM
T
J
, T
STG
V
ISOL
200
–55 to +150
4500
(1)
3500
(2)
1500
(3)
125
A
°C
V
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
F
I
R
t
rr
C
J
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
FES
8GT
FES
8HT
FES
8JT
Unit
V
µA
Maximum instantaneous forward voltage @ 8.0A
(4)
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4V, 1MH
z
T
C
=25°C
T
C
=100°C
0.95
10
500
35
85
1.30
1.50
50
50
ns
pF
Thermal Characteristics
(T
Parameter
C
= 25°C unless otherwise noted)
Symbol
R
ΘJC
FES
2.2
FESF
5.0
FESB
2.2
Unit
°C/W
Typical thermal resistance from junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤
4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
FES8AT thru FES8JT
FESF8AT thru FESF8JT
FESB8AT thru FESB8JT
Case
TO-220AC
ITO-220AC
TO-263AB
Package Code
45
45
31
45
81
Package Option
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
www.vishay.com
2
Document Number 88600
02-Apr-03
FES8JT, FESF8JT, FESB8JT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curve
Average Forward Rectified Current (A)
10
150
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
C
= 100°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Resistive or Inductive Load
8.0
Heatsink, Case Temperature, T
C
6.0
125
100
75
4.0
Free Air, Ambient Temperature, T
A
50
25
2.0
0
0
50
100
150
0
1
10
100
Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
40
Fig. 4 – Typical Reverse Leakage
Characteristics
Instantaneous Reverse Leakage Current
(µA)
100
T
J
= 125°C
Instantaneous Forward Current (A)
Pulse width = 300µs
1% Duty Cycle
10
T
J
= 125°C
T
J
= 25°C
10
1
50 - 200V
500 - 600V
T
J
= 100°C
1.0
0.1
T
J
= 25°C
0
20
40
60
80
100
0.1
0.2
0.6
1.0
1.4
50 - 200V
300 - 400V
500 - 600V
1.8
0.01
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
1,000
T
J
= 25°C
f = 1.0 MHz
Vsig = 50mVp-p
Junction Capacitance (pF)
100
50 - 200V
500 - 600V
10
0.1
1
10
100
Reverse Voltage (V)
Document Number 88600
02-Apr-03
www.vishay.com
3
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