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FFA15U120DNTU

DIODE ARRAY GP 1200V 15A TO3P

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
二极管配置
1 对共阴极
二极管类型
标准
电压 - DC 反向(Vr)(最大值)
1200V
电流 - 平均整流(Io)(每二极管)
15A
不同 If 时的电压 - 正向(Vf
3.5V @ 15A
速度
快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)
100ns
不同 Vr 时的电流 - 反向漏电流
15µA @ 1200V
工作温度 - 结
-65°C ~ 150°C
安装类型
通孔
封装/外壳
TO-3P-3,SC-65-3
供应商器件封装
TO-3P
文档预览
FFA15U120DN
FFA15U120DN
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-3P
1
2
3
1. Anode 2.Cathode 3. Anode
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
Symbol
V
RRM
I
F(AV)
I
FSM
T
J,
T
STG
(per diode) T
C
=25°C unless otherwise noted
°
Value
1200
@ T
C
= 100°C
15
90
- 65 to +150
Units
V
A
A
°C
Parameter
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case
(per diode) T
C
=25
°
C unless otherwise noted
Min.
T
C
= 25
°C
T
C
= 100
°C
T
C
= 25
°C
T
C
= 100
°C
-
-
-
-
-
-
-
1.0
Typ.
-
-
-
-
-
-
-
-
Max.
3.5
3.2
15
1
100
9
405
-
µA
mA
ns
A
nC
mJ
Units
V
Value
1.0
Units
°C/W
Electrical Characteristics
Symbol
V
FM
*
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 15A
I
F
= 15A
Maximum Instantaneous Reverse Current
@ rated V
R
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=15A, di/dt = 200A/µs)
Avalanche Energy
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Rev. F, September 2000
FFA15U120DN
Typical Characteristics
80
1000
Forward Current , I
F
[A]
T
C
= 100 C
10
R
[
µ
A]
o
100
T
C
= 100 C
o
T
C
= 25 C
1
o
Reverse Current , I
10
o
1
T
C
= 25 C
0.1
0.01
0.1
0
1
2
3
4
5
6
0.001
0
200
400
600
800
1000
1200
Forward Voltage , V
F
[V]
Reverse Voltage , V
R
[V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
140
Figure 2. Typical Reverse Current
vs. Reverse Voltage
250
Reverse Recovery Time , t
rr
[ns]
Typical Capacitance
at 0V = 270 pF
120
V
R
= 200V
I
F
= 15A
Capacitance , Cj [pF]
200
100
T
C
= 100 C
o
150
80
100
60
50
T
C
= 25 C
40
100
o
0.1
1
10
100
500
Reverse Voltage , V
R
[V]
di/dt [A/
µ
s]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
20
Reverse Recovery Current , I
rr
[A]
Average Forward Current , I
16
14
12
10
8
6
4
2
0
100
F(AV)
18
V
R
= 200V
I
F
= 15A
[A]
20
15
C
D
T
C
= 100 C
o
10
T
C
= 25 C
o
5
500
0
60
80
100
120
o
140
160
di/dt [A/
µ
s]
Case Temperature , T
C
[ C]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Figure 6. Forward Current Derating Curve
©2000 Fairchild Semiconductor International
Rev. F, September 2000
FFA15U120DN
Package Dimensions
TO-3P
15.60
±0.20
3.80
±0.20
13.60
±0.20
ø3.20
±0.10
9.60
±0.20
4.80
±0.20
1.50
–0.05
+0.15
12.76
±0.20
19.90
±0.20
16.50
±0.30
3.00
±0.20
1.00
±0.20
3.50
±0.20
2.00
±0.20
13.90
±0.20
23.40
±0.20
18.70
±0.20
1.40
±0.20
5.45TYP
[5.45
±0.30
]
5.45TYP
[5.45
±0.30
]
0.60
–0.05
+0.15
Dimensions in Millimeters
Rev. F, September 2000
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
FAST
®
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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参数对比
与FFA15U120DNTU相近的元器件有:。描述及对比如下:
型号 FFA15U120DNTU
描述 DIODE ARRAY GP 1200V 15A TO3P
二极管配置 1 对共阴极
二极管类型 标准
电压 - DC 反向(Vr)(最大值) 1200V
电流 - 平均整流(Io)(每二极管) 15A
不同 If 时的电压 - 正向(Vf 3.5V @ 15A
速度 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr) 100ns
不同 Vr 时的电流 - 反向漏电流 15µA @ 1200V
工作温度 - 结 -65°C ~ 150°C
安装类型 通孔
封装/外壳 TO-3P-3,SC-65-3
供应商器件封装 TO-3P
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