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FFM306B-HF-T

Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Rectron Semiconductor

厂商官网:http://www.rectron.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
SMB, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW LEAKAGE CURRENT
应用
FAST RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
最大非重复峰值正向电流
200 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
800 V
最大反向电流
2 µA
最大反向恢复时间
0.5 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.098 gram
FFM301B
THRU
FFM307B
DO-214AA
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ T
A
=25
O
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
at T
A
= 55 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Squared Time
Typical Thermal Resistance (Note 4)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (@T
A
=25
O
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES :
@T
A
= 25 C
@T
A
= 100
o
C
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
2
It
FFM301B FFM302B FFM303B FFM304B FFM305B FFM306B FFM307B
UNITS
Volts
Volts
Volts
Amps
Amps
A /S
0
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
165.9
50
15
15
-55 to + 150
600
420
600
800
560
800
1000
700
1000
2
R
JA
R
JL
C
J
T
J
, T
STG
C/W
pF
0
C
SYMBOL
V
F
I
R
FFM301B FFM302B FFM303B FFM304B FFM305B FFM306B FFM307B
UNITS
Volts
uAmps
1.30
2.0
100
trr
150
250
500
nSec
2016-09
REV:O
1. Reverse Re covery Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
4. Thermal Resistance : Mounted on PCB.
5. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.
RATING AND CHARACTERISTICS CURVES ( FFFM301B THRU FFM307B )
trr
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
(-)
0
PULSE
GENERATOR
(NOTE 2)
-0.25A
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR 50/100 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
3.0
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, ( A)
1000
2.5
2.0
1.5
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
100
T
A
= 100
O
C
10
T
A
= 75
O
C
T
A
= 25
O
C
1.0
0.5
0
25
50
75
100
125
O
150
175
0.1
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE, ( C)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
RATING AND CHARACTERISTICS CURVES ( FFM301B THRU FFM307B )
INSTANTANEOUS FORWARD CURRENT, (A)
20
10
T
J
= 25 C
O
PEAK FORWARD SURGE CURRENT, (A)
200
150
125
100
8.3ms Single Half Sine-Wave
(JEDED Method)
3.0
1.0
0.3
0.1
0.03
0.01
0
0.5
1.0
1.5
Pulse Width=300uS
1% Duty Cycle
50
30
20
2.0
2.5
3.0
3.5
10
1
5
10
50
100
INSTANTANEOUS FORWARD VOLTAGE, (V)
NUMBER OF CYCLES AT 60Hz
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
200
JUNCTION CAPACITANCE, (pF)
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
I
SURGE CURRENT
100
60
40
20
10
6
4
2
1
0.1 0.2
0.4
1.0
2
4
10
T
J
= 25
O
C
20
40
100
REVERSE VOLTAGE, (V)
FIG.6 TYPICAL JUNCTION CAPACITANCE
Mounting Pad Layout
0.106 MAX.
(2.69 MAX.)
0.083MIN.
( 2.10 MIN.)
0.050 MIN.
(1.27 MIN.)
0.220
(5.58)
REF
Dimensions in inches and (millimeters)
Marking Description
Rectron Logo
3FX
V X
Cathode Band
X
X
Part No.
Voltage-code
1-------50V
2-------100V
3-------200V
4-------400V
5-------600V
6-------800V
7-------1000V
Year – code:
(Y:Last digit of year&
A:2010 ,B:2011……)
Week – code:
(WW: 01~52)
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