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FGA40T65UQDF

IGBT 650V 80A 231W TO3PN

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
IGBT 类型
NPT
电压 - 集射极击穿(最大值)
650V
电流 - 集电极(Ic)(最大值)
80A
脉冲电流 - 集电极 (Icm)
120A
不同 Vge,Ic 时的 Vce(on)
1.67V @ 15V,40A
功率 - 最大值
231W
开关能量
989µJ(开),310µJ(关)
输入类型
标准
栅极电荷
306nC
25°C 时 Td(开/关)值
32ns/271ns
测试条件
400V,40A,6 欧姆,15V
反向恢复时间(trr)
89ns
工作温度
-55°C ~ 175°C(TJ)
安装类型
通孔
封装/外壳
TO-3P-3,SC-65-3
供应商器件封装
TO-3PN
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FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
FGA40T65UQDF
650 V, 40 A Field Stop Trench IGBT
Features
Maximum Junction Temperature: T
J
= 175
o
C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: V
CE(sat)
= 1.33 V ( Typ.) @ I
C
= 40 A
100% of the Parts tested for I
LM
(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant
May 2016
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 4
th
generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
C
G
G
C
E
TO-3PN
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25 C
@ T
C
=
100
o
C
o
FGA40T65UQDF
650
20
30
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
80
40
120
120
40
20
60
231
115
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
o
C
o
C
o
C
I
C
I
LM
(1)
I
CM
(2)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes:
1. V
CC
= 400 V, V
GE
= 15 V, I
C
= 120 A, R
G
= 20
,
Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
Thermal Characteristics
Symbol
R
JC
(IGBT)
R
JC
(Diode)
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGA40T65UQDF
0.65
1.75
40
Unit
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FGA40T65UQDF
Device
FGA40T65UQDF
Package
TO-3PN
Reel Size
-
Tape Width
-
Qty per Tube
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics
BV
CES
BV
CES
/
T
J
I
CES
I
GES
T
C
= 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 1 mA
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0 V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0 V
V
GE
= V
GES
, V
CE
= 0 V
650
-
-
-
-
0.52
-
-
-
-
250
400
V
V/
o
C
A
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
= 40 mA, V
CE
= V
GE
I
C
= 40 A
,
V
GE
= 15 V
I
C
= 40 A
,
V
GE
= 15 V,
T
C
= 175
o
C
2.5
-
-
4.0
1.33
1.5
5.5
1.67
-
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz
-
-
-
7309
58
30
-
-
-
pF
pF
pF
Switching Characteristics
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
ts
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
ts
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6
,
V
GE
= 15 V,
Inductive Load, T
C
= 175
o
C
V
CC
= 400 V, I
C
= 40 A,
R
G
= 6
,
V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
18
271
11
989
310
1299
30
22
298
16
1400
553
1953
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
J
J
J
ns
ns
ns
ns
J
J
J
©2016 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of the IGBT
Symbol
Q
g
Q
ge
Q
gc
(Continued)
Parameter
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Test Conditions
V
CE
= 400 V, I
C
= 40 A,
V
GE
= 15 V
Min.
-
-
-
Typ.
306
30
77
Max.
-
-
-
Unit
nC
nC
nC
Electrical Characteristics of the Diode
Symbol
V
FM
E
rec
T
rr
Q
rr
T
C
= 25°C unless otherwise noted
Parameter
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I
F
= 20 A
Test Conditions
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 175
o
C
I
F
= 20 A, dI
F
/dt = 200 A/s
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 25
o
C
T
C
=
175
o
C
Min.
-
-
-
-
-
-
-
Typ.
1.5
1.39
115
89
251
289
1502
Max.
1.95
-
-
-
-
-
-
Unit
V
J
ns
nC
©2016 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
FGA40T65UQDF — 650 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
©2016 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
FGA40T65UQDF Rev. 1.0
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