FGA50N60LS
IGBT
FGA50N60LS
General Description
Fairchild's LS series product of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The LS series is
especially designed for applications in medium frequencies
such as switched reluctance motor controls, AC & DC
motor controls, general inverters etc.
Features
•
•
•
•
Short circuit rated 10µs @ T
C
= 100°C, V
GE
= 15V
Low saturation voltage : V
CE(sat)
= 1.6 V @ I
C
= 50A
High input impedance
Optimized for medium operating frequencies (1~5kHz)
Applications
Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robotics, and Servo controls
C
G
E
TO-3P
G C E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
FGA50N60LS
600
±
20
100
50
150
10
240
96
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.52
40
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA50N60LS Rev. A
FGA50N60LS
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 50mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
I
C
= 80A
,
V
GE
= 15V
3.5
--
--
5.5
1.6
1.96
7.5
1.8
--
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
2660
250
78
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
54
96
146
326
1.1
3.2
4.3
56
87
134
575
1.2
5.0
6.2
--
167
27
68
14
--
--
220
600
--
--
6.0
--
--
215
880
--
--
8.7
--
240
35
100
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
µs
nC
nC
nC
nH
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
@
T
C
V
CC
=300 V, V
GE
= 15V
= 100°C
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
Measured 5mm from PKG
©2003 Fairchild Semiconductor Corporation
FGA50N60LS Rev. A
FGA50N60LS
140
120
20V
15V
12V
10V
Common Emitter
o
T
C
= 25 C
140
120
Collector Current, I
C
[A]
100
80
60
40
20
0
Common Emitter
V
GE
= 15V
o
T
C
= 25 C
o
T
C
= 125 C
Collector Current, I
C
[A]
100
80
60
40
20
0
0
2
V
GE
= 8V
4
6
8
1
Collector-Emitter Voltage, V
CE
[V]
10
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.0
Common Emitter
V
GE
= 15V
60
Vcc = 300V
Load Current : peak of square wave
50
100A
Collector - Emitter Voltage, V
CE
[V]
2.5
Load Current [A]
40
2.0
50A
1.5
30
20
I
C
= 30A
10
1.0
-50
0
50
o
Duty cycle : 50%
o
Tc = 100 C
Power Dissipation = 48W
0.1
1
10
100
1000
0
100
150
Case Temperature, T
C
[ C]
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
o
T
C
= 25 C
20
Common Emitter
o
T
C
= 125 C
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
100A
4
I
C
= 30A
0
0
4
8
12
16
20
50A
8
100A
50A
I
C
= 30A
4
0
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FGA50N60LS Rev. A
FGA50N60LS
7000
6000
5000
Cies
Common Emitter
V
GE
=0V, f = 1MHz
o
T
C
= 25 C
1000
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 50A
o
T
C
= 25 C
4000
Coes
3000
2000
1000
0
1
10
Cres
Switching Time [ns]
T
C
= 125 C
o
Capacitance [pF]
Ton
100
Tr
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 50A
o
T
C
= 25 C
10000
Toff
Common Emitter
V
CC
= 300V, V
GE
= +15V
I
C
= 50A
o
T
C
= 25 C
T
C
= 125 C
o
Switching Time [ns]
1000
Tf
Switching Loss [uJ]
T
C
= 125 C
o
Eoff
Eoff
Eon
Tf
100
10
100
1000
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
= +15V, R
G
= 5.9
Ω
T
C
= 25 C
o
T
C
= 125 C
o
1000
Toff
Tf
Ton
Toff
Tf
100
100
Tr
Switching Time [ns]
Switching Time [ns]
Common Emitter
V
GE
= +15V, R
G
= 5.9
Ω
T
C
= 25 C
o
T
C
= 125 C
10
10
20
40
60
80
100
10
10
20
40
60
80
100
o
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA50N60LS Rev. A
FGA50N60LS
10000
15
Common Emitter
R
L
= 6
Ω
Switching Loss [uJ]
GE
(V)
12
Tc=25 C
300V
o
Gate-Emitter Voltage, V
Eoff
1000
Eoff
9
200V
Vcc=100V
6
Eon
Common Emitter
V
GE
= +15V, R
G
= 5.9
Ω
T
C
= 25 C
o
T
C
= 125 C
20
40
60
80
100
o
3
Eon
100
10
0
0
30
60
90
120
150
180
Collector Current, I
C
[A]
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
I
C
MAX. (Pulsed)
100
I
C
MAX. (Continuous)
100
µ
s
1ms
DC Operation
50
µ
s
100
Collector Current, I
C
[A]
10
1
Single Nonrepetitive
o
Pulse T
C
= 25 C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
Collector Current, I
C
[A]
10
0.1
1
1
Safe Operating Area
o
V
GE
= 20V, T
C
= 100 C
10
100
1000
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
Pdm
0.01
0.02
t1
0.01
single pulse
1E-3
-5
-4
-3
-2
-1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0
1
10
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA50N60LS Rev. A
TI技术论坛
