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FM24C16B-G

SPECIALTY MEMORY CIRCUIT, PDSO8
专用存储器电路, PDSO8

器件类别:存储    存储   

厂商名称:Ramtron International Corporation (Cypress Semiconductor Corporation)

厂商官网:http://www.cypress.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
unknow
JESD-30 代码
R-PDSO-G8
长度
4.9 mm
内存密度
16384 bi
内存集成电路类型
MEMORY CIRCUIT
内存宽度
8
功能数量
1
端子数量
8
字数
2048 words
字数代码
2000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
2KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
5 V
认证状态
Not Qualified
座面最大高度
1.75 mm
最大待机电流
0.00001 A
最大压摆率
0.0004 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
3.9 mm
文档预览
Preliminary
FM24C16B
16Kb Serial 5V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance (10
12
) Read/Write Cycles
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
5V operation
100
A
Active Current (100 kHz)
4
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM24C16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
The FM24C16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM24C16B is capable of
supporting 10
12
read/write cycles, or a million times
more write cycles than EEPROM.
These capabilities make the FM24C16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows the system to write
data more frequently, with less system overhead.
The FM24C16B provides substantial benefits to users
of serial EEPROM, and these benefits are available as
a hardware drop-in replacement. The FM24C16B is
available in an industry standard 8-pin SOIC package
and uses a familiar two-wire protocol. The
specifications are guaranteed over the industrial
temperature range from -40°C to +85°C.
Pin Configuration
NC
NC
NC
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Names
SDA
SCL
WP
VSS
VDD
Function
Serial Data/Address
Serial Clock
Write Protect
Ground
Supply Voltage
Ordering Information
FM24C16B-G
FM24C16B-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Rev. 1.3
July 2011
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 12
FM24C16B - 16Kb 5V I2C F-RAM
Counter
Address
Latch
256 x 64
FRAM Array
8
SDA
`
Serial to Parallel
Converter
Data Latch
SCL
WP
Control Logic
Figure 1. Block Diagram
Pin Description
Pin Name
SDA
Type
I/O
Pin Description
Serial Data Address: This is a bi-directional data pin for the two-wire interface. It
employs an open-drain output and is intended to be wire-OR‟d with other devices on the
two-wire bus. The input buffer incorporates a Schmitt trigger for noise immunity and the
output driver includes slope control for falling edges. A pull-up resistor is required.
Serial Clock: The serial clock input for the two-wire interface. Data is clocked-out on
the falling edge and clocked-in on the rising edge.
Write Protect: When WP is high, the entire array is write-protected. When WP is low,
all addresses may be written. This pin is internally pulled down.
Supply Voltage (5V)
Ground
No connect
SCL
WP
VDD
VSS
NC
Input
Input
Supply
Supply
-
Rev. 1.3
July 2011
Page 2 of 12
FM24C16B - 16Kb 5V I2C F-RAM
Overview
The FM24C16B is a serial FRAM memory. The
memory array is logically organized as a 2,048 x 8
memory array and is accessed using an industry
standard two-wire interface. Functional operation of
the FRAM is similar to serial EEPROMs. The major
difference between the FM24C16B and a serial
EEPROM with the same pinout relates to its superior
write performance.
Two-wire Interface
The FM24C16B employs a bi-directional two-wire
bus protocol using few pins and little board space.
Figure 2 illustrates a typical system configuration
using the FM24C16B in a microcontroller-based
system. The industry standard two-wire bus is
familiar to many users but is described in this section.
By convention, any device that is sending data onto
the bus is the transmitter while the target device for
this data is the receiver. The device that is controlling
the bus is the master. The master is responsible for
generating the clock signal for all operations. Any
device on the bus that is being controlled is a slave.
The FM24C16B is always a slave device.
The bus protocol is controlled by transition states in
the SDA and SCL signals. There are four conditions
including Start, Stop, Data bit, and Acknowledge.
Figure 3 illustrates the signal conditions that define
the four states. Detailed timing diagrams are shown in
the Electrical Specifications section.
Memory Architecture
When accessing the FM24C16B, the user addresses
2,048 locations each with 8 data bits. These data bits
are shifted serially. The 2,048 addresses are accessed
using the two-wire protocol, which includes a slave
address (to distinguish from other non-memory
devices), a row address, and a segment address. The
row address consists of 8-bits that specify one of 256
rows. The 3-bit segment address specifies one of 8
segments within each row. The complete 11-bit
address specifies each byte uniquely.
Most functions of the FM24C16B either are
controlled by the two-wire interface or handled
automatically by on-board circuitry. The memory is
read or written at the speed of the two-wire bus.
Unlike an EEPROM, it is not necessary to poll the
device for a ready condition since writes occur at bus
speed. That is, by the time a new bus transaction can
be shifted into the part, a write operation is complete.
This is explained in more detail in the interface
section below.
Note that the FM24C16B contains no power
management circuits other than a simple internal
power-on reset. It is the user‟s responsibility to ensure
that VDD is within data sheet tolerances to prevent
incorrect operation.
VDD
Rmin = 1.8 Kohm
Rmax = tR/Cbus
Microcontroller
SDA SCL
FM24C16B
SDA SCL
Other Slave Device
Figure 2. Typical System Configuration
Rev. 1.3
July 2011
Page 3 of 12
FM24C16B - 16Kb 5V I2C F-RAM
SCL
SDA
Stop
(Master)
Start
(Master)
7
6
0
Data bit Acknowledge
(Transmitter) (Receiver)
Data bits
(Transmitter)
Figure 3. Data Transfer Protocol
Stop Condition
A stop condition is indicated when the bus master
drives SDA from low to high while the SCL signal is
high. All operations using the FM24C16B must end
with a Stop condition. If an operation is pending
when a Stop is asserted, the operation will be aborted.
The master must have control of SDA (not a memory
read) in order to assert a Stop condition.
Start Condition
A Start condition is indicated when the bus master
drives SDA from high to low while the SCL signal is
high. All read and write transactions begin with a
Start condition. An operation in progress can be
aborted by asserting a Start condition at any time.
Aborting an operation using the Start condition will
prepare the FM24C16B for a new operation.
If during operation the power supply drops below the
specified VDD minimum, the system should issue a
Start condition prior to performing another operation.
Data/Address Transfer
All data transfers (including addresses) take place
while the SCL signal is high. Except under the two
conditions described above, the SDA signal should
not change while SCL is high. For system design
considerations, keeping SCL in a low state while idle
improves robustness.
Acknowledge
The Acknowledge takes place after the 8
th
data bit has
been transferred in any transaction. During this state,
the transmitter should release the SDA bus to allow
the receiver to drive it. The receiver drives the SDA
signal low to acknowledge receipt of the byte. If the
receiver does not drive SDA low, the condition is a
No-Acknowledge and the operation is aborted.
The receiver would fail to acknowledge for two
distinct reasons. First is that a byte transfer fails. In
this case, the No-Acknowledge ends the current
operation so that the part can be addressed again.
This allows the last byte to be recovered in the event
of a communication error.
Second and most common, the receiver does not
acknowledge to deliberately end an operation. For
example, during a read operation, the FM24C16B
will continue to place data onto the bus as long as the
receiver sends Acknowledges (and clocks). When a
read operation is complete and no more data is
needed, the receiver must not acknowledge the last
byte. If the receiver acknowledges the last byte, this
will cause the FM24C16B to attempt to drive the bus
on the next clock while the master is sending a new
command such as a Stop.
Slave Address
The first byte that the FM24C16B expects after a
Start condition is the slave address. As shown in
Figure 4, the slave address contains the device type,
the page of memory to be accessed, and a bit that
specifies if the transaction is a read or a write.
Bits 7-4 are the device type and should be set to
1010b for the FM24C16B. The device type allows
other types of functions to reside on the 2-wire bus
within an identical address range. Bits 3-1 are the
page select. They specify the 256-byte block of
memory that is targeted for the current operation. Bit
0 is the read/write bit. A 0 indicates a write operation.
Rev. 1.3
July 2011
Page 4 of 12
FM24C16B - 16Kb 5V I2C F-RAM
Slave ID
Page
Select
Memory Operation
The FM24C16B is designed to operate in a manner
very similar to other 2-wire interface memory
products. The major differences result from the
higher performance write capability of FRAM
technology. These improvements result in some
differences between the FM24C16B and a similar
configuration EEPROM during writes. The complete
operation for both writes and reads is explained
below.
Write Operation
All writes begin with a slave ID then a word address
as previously mentioned. The bus master indicates a
write operation by setting the LSB of the Slave
Address to a 0. After addressing, the bus master sends
each byte of data to the memory and the memory
generates an acknowledge condition. Any number of
sequential bytes may be written. If the end of the
address range is reached internally, the address
counter will wrap from 7FFh to 000h.
Unlike other nonvolatile memory technologies, there
is no write delay with FRAM. The entire memory
cycle occurs in less time than a single bus clock.
Therefore, any operation including read or write can
occur immediately following a write. Acknowledge
polling, a technique used with EEPROMs to
determine if a write is complete is unnecessary and
will always return a „ready‟ condition.
An actual memory array write occurs after the 8
th
data
bit is transferred. It will be complete before the
acknowledge is sent. Therefore, if the user desires to
abort a write without altering the memory contents,
this should be done using start or stop condition prior
to the 8
th
data bit. The FM24C16B needs no page
buffering.
The memory array can be write protected using the
WP pin. Setting the WP pin to a high condition
(VDD) will write-protect all addresses. The
FM24C16B will not acknowledge data bytes that are
written to protected addresses. In addition, the
address counter will not increment if writes are
attempted to these addresses. Setting WP to a low
state (VSS) will deactivate this feature.
Figure 5 and 6 below illustrate both a single-byte and
multiple-byte write cases.
1
0
1
0
A2
A1
A0
R/W
Figure 4. Slave Address
Word Address
After the FM24C16B (as receiver) acknowledges the
slave ID, the master will place the word address on
the bus for a write operation. The word address is the
lower 8-bits of the address to be combined with the 3-
bits of the page select to specify the exact byte to be
written. The complete 11-bit address is latched
internally.
No word address occurs for a read operation, though
the 3-bit page select is latched internally. Reads
always use the lower 8-bits that are held internally in
the address latch. That is, reads always begin at the
address following the previous access. A random read
address can be loaded by doing a write operation as
explained below.
After transmission of each data byte, just prior to the
acknowledge, the FM24C16B increments the internal
address latch. This allows the next sequential byte to
be accessed with no additional addressing. After the
last address (7FFh) is reached, the address latch will
roll over to 000h. There is no limit on the number of
bytes that can be accessed with a single read or write
operation.
Data Transfer
After all address information has been transmitted,
data transfer between the bus master and the
FM24C16B can begin. For a read operation the
device will place 8 data bits on the bus then wait for
an acknowledge. If the acknowledge occurs, the next
sequential byte will be transferred. If the
acknowledge is not sent, the read operation is
concluded. For a write operation, the FM24C16B will
accept 8 data bits from the master then send an
acknowledge. All data transfer occurs MSB (most
significant bit) first.
Rev. 1.3
July 2011
Page 5 of 12
查看更多>
参数对比
与FM24C16B-G相近的元器件有:FM24C16B、FM24C16B-GTR。描述及对比如下:
型号 FM24C16B-G FM24C16B FM24C16B-GTR
描述 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
内存宽度 8 8 8
功能数量 1 1 1
端子数量 8 8 8
组织 2KX8 2K X 8 2KX8
表面贴装 YES Yes YES
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
是否Rohs认证 符合 - 符合
厂商名称 Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码 SOIC - SOIC
包装说明 SOP, SOP8,.25 - SOP, SOP8,.25
针数 8 - 8
Reach Compliance Code unknow - unknow
JESD-30 代码 R-PDSO-G8 - R-PDSO-G8
长度 4.9 mm - 4.9 mm
内存密度 16384 bi - 16384 bi
内存集成电路类型 MEMORY CIRCUIT - MEMORY CIRCUIT
字数 2048 words - 2048 words
字数代码 2000 - 2000
工作模式 SYNCHRONOUS - SYNCHRONOUS
最高工作温度 85 °C - 85 °C
最低工作温度 -40 °C - -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY
封装代码 SOP - SOP
封装等效代码 SOP8,.25 - SOP8,.25
封装形状 RECTANGULAR - RECTANGULAR
封装形式 SMALL OUTLINE - SMALL OUTLINE
电源 5 V - 5 V
认证状态 Not Qualified - Not Qualified
座面最大高度 1.75 mm - 1.75 mm
最大待机电流 0.00001 A - 0.00001 A
最大压摆率 0.0004 mA - 0.0004 mA
最大供电电压 (Vsup) 5.5 V - 5.5 V
最小供电电压 (Vsup) 4.5 V - 4.5 V
标称供电电压 (Vsup) 5 V - 5 V
技术 CMOS - CMOS
端子节距 1.27 mm - 1.27 mm
宽度 3.9 mm - 3.9 mm
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