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FMC1718LN-02

Wide Band Medium Power Amplifier, 17700MHz Min, 18700MHz Max, GAAS,

器件类别:无线/射频/通信    射频和微波   

厂商名称:FUJITSU(富士通)

厂商官网:http://edevice.fujitsu.com/fmd/en/index.html

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器件参数
参数名称
属性值
厂商名称
FUJITSU(富士通)
Reach Compliance Code
compliant
最大输入功率 (CW)
-1.5 dBm
最大工作频率
18700 MHz
最小工作频率
17700 MHz
最高工作温度
85 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC
封装等效代码
FLNG,.44X.24 H.S
电源
8,-5 V
射频/微波设备类型
WIDE BAND MEDIUM POWER
技术
GAAS
最大电压驻波比
2.5
文档预览
FMC1718LN-02
Ku, K-Band Power GaAs Modules
FEATURES
High Output Power: P1dB = 12dBm(Typ.)
High Gain: G1dB = 13.5dB(Typ.)
Low In/Out VSWR
Low Noise: NF = 2.5dB (Typ.)
Broad Band: 17.7 ~ 18.7GHz
Impedance Matched Zin/Zout = 50W
Hermetically Sealed Package (12 X 15 X 3.5mm)
DESCRIPTION
The FMC1718LN-02 is a module that contains a two-stage amplifier,
internally matched, for standard communications in the 17.7 to 18.7GHz
frequency range. This product is well suited for point-to-point radio
applications as it offers high power, high gain, low VSWR and low noise.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability
and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25¡C)
Parameter
DC Input Voltage
DC Input Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Rating
10
-7
-1.5
-55 to +125
-55 to +85
Unit
V
V
dBm
¡C
¡C
Fujitsu recommends the following conditions for the reliable operation of GaAs modules:
1. The drain operating voltage (VDD) should not exceed 8 volts.
2. The gate operating voltage (VGG) should not exceed -5 volts.
ELECTRICAL CHARACTERISTICS (Case Temperature Tc = 25¡C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1 dB G.C.P.
Noise Figure
Gain Flatness
Input VSWR
Output VSWR
DC Input Current
DC Input Current
CASE STYLE:
GJ
Symbol
f
P1dB
G1dB
NF
ÆG
VSWRi
VSWRo
ID
IG
VDD =8V
VGG = -5V
f = 17.7 ~ 18.7 GHz
VDD =8V
VGG = -5V
Pin = -15dBm
f = 17.7 ~ 18.7GHz
VDD =8V
VGG =-5V
Test Conditions
Min.
Limit
Typ. Max.
Unit
GHz
-
-
3.5
-
-
-
70
15
dBm
dB
dB
dB
-
-
mA
mA
17.7 ~ 18.7
11.0
12.5
-
-
-
-
-
-
12.0
13.5
2.5
1.0
3.0:1
2.5:1
40
10
G.C.P.: Gain Compression Point
1998 Microwave Databook
554
Data Sheets
FMC1718LN-02
Ku, K-Band Power GaAs Modules
GAIN & NF vs. FREQUENCY
VDD=8V
VGG=-5V
Gain (dB)
15
14
NF (dB)
13
NF
Gain
2.
4
3
2
17.7
18.2
18.7
Frequency (GHz)
Case Style "GJ"
Metal-Ceramic Hermetic Package
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
1.3±0.15
(0.051)
0.3
(0.012)
3
11±0.15
(0.433)
7
(0.276)
15
(0.591)
3.8
(0.149)
2
1
4
5
6
6-0.08
(0.003)
0.9
(0.035)
1. V
DD
2. RFin
3. V
GG
4. V
GG
5. RF
out
6. V
DD
7. GND (Body)
Unit: mm (inches)
7
INDEX
1 Min.
(0.039)
6±0.15
(0.236)
12±0.15
(0.472)
Data Sheets
555
1998 Microwave Databook
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