首页 > 器件类别 > 无线/射频/通信 > 射频和微波

FMM5061VF

Wide Band Medium Power Amplifier, 9500MHz Min, 13300MHz Max, HERMETIC SEALED, METAL CERAMIC, CASE VF, 6 PIN

器件类别:无线/射频/通信    射频和微波   

厂商名称:SUMITOMO(住友)

厂商官网:https://global-sei.com/

器件标准:  

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
SUMITOMO(住友)
Reach Compliance Code
unknown
其他特性
HIGH RELIABILITY
特性阻抗
50 Ω
构造
COMPONENT
增益
22 dB
最大输入功率 (CW)
26 dBm
最大工作频率
13300 MHz
最小工作频率
9500 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
射频/微波设备类型
WIDE BAND MEDIUM POWER
文档预览
FMM5061VF
FEATURES
・High
Output Power: Pout=33.0dBm (typ.)
・High
Linear Gain: G
L
=27.0dB (typ.)
・Broad
Band: 9.5~13.3GHz
・Impedance
Matched Zin/Zout=50Ω
・Small
Hermetic Metal-Ceramic Package(VF)
DESCRIPTION
The FMM5061VF is a MMIC amplifier that contains a three-stage
amplifier, internally matched, for standard communications band in the
9.5 to 13.3GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
in
T
ch
T
stg
Condition
Rating
10
-7
26
+175
-55~125
Recommend
6
-5
12
-40~+85
o
X-Band Power Amplifier MMIC
Unit
V
V
dBm
o
C
o
C
Unit
V
V
dBm
o
C
Unit
GHz
dBm
dB
%
dBc
mA
mA
mA
dB
dB
RECOMMENDED OPERATING CONDITION
Item
Symbol
Drain-Source Voltage
V
DD
Gate-Source Voltage
V
GG
Input Power
P
in
Operating Case Temperature
T
C
Condition
ELECTRICAL CHARACTERISTICS (Case Temperature T
C
=25 C)
Item
Frequency Range
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency at 1dB G.C.P.
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
Gate Current
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
Symbol
f
P
1dB
G
1dB
η
add
IM
3
I
DD
I
GG
RL
in
RL
out
Test Conditions
V
DD
=6V
V
GG
=-5V
Z
s
=Z
l
=50ohm
*1:f=9.5~11.7GHz
*2:f=11.7~13.3GHz
Limits
Min. Typ. Max.
9.5
-
13.3
*1
*1
31
33
-
*2
*2
29
31
-
24
*2
22
-
*1
26
*2
24
21
*1
*1
-
-
-
-
15
*2
-
*3
*3
*3:
f=10MHz ,
-42
-45
-
*1
*1
2-Tone Test,
-
1700 2400
*2
*2
-
1500 2400
P
out
=19dBm S.C.L.
-
25
-
-
-8
-
-
-8
-
CASE STYLE: VF
ESD
Class
0
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
~ 199 V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.2
July 2004
1
FMM5061VF
X-band Power Amplifier MMIC
OUTPUT POWER vs. FREQUENCY
VDD=6V, VGG=-5V
P1dB
OUTPUT POWER , DRAIN CURRENT
vs. INPUT POWER
VDD=6V, VGG=-5V
36
2700
9.5GHz
11.7GHz
13.3GHz
2500
Drain Current [mA]
2300
2100
1900
1700
1500
1300
1100
-10
-5
0
5
10
15
36
34
Output Power [dBm]
32
30
28
26
24
22
20
8
9
10
11
12
13
14
15
Pin=-4dBm
Pin=0dBm
Pin=+4dBm
Pin=+10dBm
34
Output Power [dBm]
32
30
28
26
24
22
20
Frequency [GHz]
Input Power [dBm]
POWER ADDED EFFICIENCY vs FREQUENCY
VDD=6V, VGG=-5V
35
Power-added Efficiency [%]
30
25
20
15
10
5
0
8
9
10
11
12
13
14
Frequency [GHz]
Pin=10dBm
P1dB
Pin=+4dBm
Pin=0dBm
Pin=-4dBm
15
2
FMM5061VF
X-Band Power Amplifier MMIC
IMD vs. FREQUENCY
VDD=6V, VGG=-5V, Pout=19dBm S.C.L.
IMD vs OUTPUT POWER
VDD=6V, VGG=-5V
-40
Intermodulation Distortion [dBc]
-20
Intermodulation Distortion [dBc]
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
9
10
11
12
13
14
15
-45
9.5GHz
11.7GHz
13.3GHz
IM3
-50
-55
-60
-65
Frequency [GHz]
IM3
IM5
IM5
15
20
25
30
2-Tone Total Output Pow er [dBm ]
3
FMM5061VF
X-band Power Amplifier MMIC
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
VGG=-5V @9.5GHz
38
36
Output Power [dBm]
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
VGG=-5V @11.7GHz
2900
5V
6V
7V
2700
Output Power [dBm]
Drain Current [mA]
38
36
34
32
30
28
26
24
22
20
-10
-5
0
5
10
15
Input Power [dBm]
5V
6V
7V
2900
2700
Drain Current [mA]
G1dB [dB]
34
32
30
28
26
24
22
20
-10
-5
2500
2300
2100
1900
1700
1500
1300
1100
0
5
10
15
2500
2300
2100
1900
1700
1500
1300
1100
Input Power [dBm]
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Drain Voltage
VGG=-5V @13.3GHz
38
36
Output Power [dBm]
34
32
30
28
26
24
22
20
-10
-5
0
5
10
15
Input Power [dBm]
5V
6V
7V
2900
2700
Drain Current [mA]
2500
2300
2100
1900
1700
1500
1300
1100
OUTPUT POWER, GAIN vs. DRAIN VOLTAGE
VGG=-5V
38
36
34
P1dB [dBm]
32
30
28
26
24
22
20
4
5
6
VDD [V]
7
8
9.5GHz
11.7GHz
13.3GHz
38
36
34
32
30
28
26
24
22
20
4
FMM5061VF
X-Band Power Amplifier MMIC
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Gate Voltage
 
VDD=6V @9.5GHz
36
34
Output Power [dBm]
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Gate Voltage
 
VDD=6V @11.7GHz
2700
-4V
-5V
-6V
2500
Output Power [dBm]
36
34
-4V
-5V
-6V
2700
2500
Drain Current [mA]
G1dB [dB]
Drain Current [mA]
32
30
28
26
24
22
20
-10
-5
0
5
10
15
Input Power [dBm]
2300
2100
1900
1700
1500
1300
1100
32
30
28
26
24
22
20
-10
-5
0
5
10
15
Input Power [dBm]
2300
2100
1900
1700
1500
1300
1100
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER by Gate Voltage
 
VDD=6V @13.3GHz
36
34
Output Power [dBm]
32
30
28
26
24
22
20
-10
-5
0
5
10
15
Input Power [dBm]
-4V
-5V
-6V
2700
2500
Drain Current [mA]
2300
2100
1900
1700
1500
1300
1100
OUTPUT POWER, GAIN vs. GATE VOLTAGE
VDD=6V
40
38
36
P1dB [dBm]
34
32
30
28
26
24
22
-7
-6
-5
VGG [V]
-4
-3
9.5GHz
11.7GHz
13.3GHz
40
38
36
34
32
30
28
26
24
22
5
查看更多>
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消