SMD Type
PNP Transistors
FMS3
(KMS3)
SOT-153
( SOT-23-5 )
0.4
+0.1
-0.1
Transistors
Unit: mm
■
Features
●
Collector Current Capability I
C
=-50mA
●
Collector Emitter Voltage V
CEO
=-120V
●
High breakdown voltage.
5
4
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
+0.2
-0.1
1
2
3
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-120
-120
-5
-50
300
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Test Conditions
Ic= -100
μA，
I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -100μA， I
C
=0
V
CB
= -100 V , I
E
=0
V
EB
= -4V , I
C
=0
I
C
=-10 mA, I
B
=-1mA
I
C
=-10 mA, I
B
=-1mA
V
CE
= -6V, I
C
= -2mA
V
CE
= -12V, I
E
= 2mA,f=100MHz
180
140
Min
-120
-120
-5
-0.5
-0.5
-0.5
-1.2
820
MHz
uA
V
V
Typ
Max
Unit
■
Marjking
Marking
S3
+0.1
0.68
-0.1
0-0.1
+0.1
1.1
-0.1
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