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FODB100

1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
1 通道 晶体管输出光电耦合器

器件类别:光电子/LED    光电   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Fairchild
包装说明
LEAD FREE, MINIATURE, BGA-4
Reach Compliance Code
compli
其他特性
UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Mi
75 V
配置
SINGLE
当前传输比率-最小值
100%
标称电流传输比
100%
最大暗电源
100 nA
最大正向电流
0.03 A
最大正向电压
1.5 V
最大绝缘电压
2500 V
JESD-609代码
e1
安装特点
SURFACE MOUNT
元件数量
1
最大通态电流
0.05 A
最高工作温度
125 °C
最低工作温度
-40 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散
0.15 W
表面贴装
YES
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
文档预览
FODB100, FODB101, FODB102 Single Channel Microcoupler™
July 2006
FODB100, FODB101, FODB102
Single Channel Microcoupler™
Features
Low profile package
tm
Description
The FODB100, FODB101 and FODB102 single channel
MICROCOUPLERS™ are all Pb-free, low profile
miniature surface mount optocouplers in a Ball Grid
Array (BGA) package. Each consists of an aluminum
gallium arsenide (AlGaAs) infrared emitting diode driving
a silicon phototransistor.
(1.20mm maximum mounted height)
Land pattern allows for optimum board space savings
High Current Transfer Ratio (CTR) at low IF
Minimum isolation distance of 0.45mm
High steady state isolation voltage of 2500V
rms
Data rates up to 120Kbit/s (NRZ)
Minimum creepage distance of 2mm
Wide operating temperature range of -40°C to +125°C
Available in tape and reel quantities of 3000 units
Applicable to Pb-free Infrared Ray reflow (260°C max)
UL and VDE approved
Schematic
ANODE 1
4 COLLECTOR
Applications
Primarily suited for DC-DC converters
For ground loop isolation, signal to noise isolation
CATHODE 2
3 EMITTER
Communications – chargers, adapters
Consumer – appliances, set top boxes
Industrial – power supplies, motor control
Package Dimensions
3.50
±
0.10
2.50
1
2
4
3
B
A
0.65 MAX
2.50
BALL #1
INDICATOR
3.50
±
0.10
(Ø2.30)
4
BOTTOM VIEW
3
0.98 MAX
Ø 0.80 MIN
0.10 C B A
1
TOP VIEW
2
0.35 MAX
0.25 MIN
1.20 MAX
0.85 MAX
0.68 MIN
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) NO JEDEC REGISTRATION REFERENCE AS
OF NOVEMBER 2002.
C
0.10 C
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FODB100, FODB101, FODB102 Rev. 1.0.0
FODB100, FODB101, FODB102 Single Channel Microcoupler™
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified)
Symbol
TOTAL PACKAGE
T
STG
T
OPR
T
j
EMITTER
I
F (avg)
V
R
P
D
DETECTOR
Continuous Collector Current
P
D
V
CEO
V
ECO
Power Dissipation
Derate linearly (above 25°C)
Collector-Emitter Voltage
Emitter-Collector Voltage
50
150
1.42
75
7
mA
mW
mW/°C
V
V
Continuous Forward Current
Reverse Input Voltage
Power Dissipation
Derate linearly (above 25°C)
30
6
40
0.39
mA
V
mW
mW/°C
Storage Temperature
Operating Temperature
Junction Temperature
-55 to +150
-40 to +125
130
°C
°C
°C
Parameter
Value
Units
2
FODB100, FODB101, FODB102 Rev. 1.0.0
www.fairchildsemi.com
FODB100, FODB101, FODB102 Single Channel Microcoupler™
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
DETECTOR
BV
CEO
BV
ECO
I
CEO
C
CE
Breakdown Voltage
Collector to Emitter
Emitter to Collector
Collector Dark Current
(1)
Capacitance
I
C
= 100µA, I
F
= 0
I
E
= 100µA, I
F
= 0
V
CE
= 75V, I
F
= 0
V
CE
= 0V, f = 1MHz
8
75
7
100
V
V
nA
pF
Forward Voltage
Reverse Current
I
F
= 2mA
V
R
= 6V
1.0
1.5
10
V
µA
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Transfer Characteristics
Symbol
CTR
Characteristic
Current Transfer Ratio
(2)
Test Conditions
I
F
= 1mA, V
CE
= 5V
Min.
100
100
75
Typ.
Max.
Unit
%
%
CTR
CE(SAT)
Saturated Current Transfer I
F
= 1.6mA, V
CE
= 0.4V
Ratio (Collector to Emitter)
I
F
= 1.0mA, V
CE
= 0.4V
V
CE (SAT)
Saturation Voltage
I
F
= 3.0mA, I
C
= 1.8mA
I
F
= 1.6mA, I
C
= 1.6mA
t
r
t
f
T
PHL
Rise Time (Non-Saturated) I
C
= 2mA, V
CE
= 5 V, R
L
= 1k
Fall Time (Non-Saturated)
Propagation Delay
High to Low
Propagation Delay
Low to High
I
C
= 2mA, V
CE
= 5 V, R
L
= 1k
I
F
= 1.6mA, V
CC
= 5.0 V, R
L
= 750
I
F
= 1.6mA, V
CC
= 5.0 V, R
L
= 4.7k
I
F
= 1.6mA, V
CC
= 5.0 V, R
L
= 750
I
F
= 1.6mA, V
CC
= 5.0 V, R
L
= 4.7k
0.4
1
5
3
12
5
19
V
µs
µs
T
PLH
µs
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Test Conditions
Min.
2500
10
12
Typ.
Max.
Unit
V(rms)
Steady State Isolation Voltage
(3)
RH
50%, T
A
= 25°C, t = 1 sec
Resistance (input to output)
(3)
Capacitance (input to output)
(3)
V
I-O
= 500VDC
f = 1MHz
0.3
0.5
pF
Notes:
1. The white dome area is sensitive to high intensity ambient light or any light source in the 500nm to 1200nm
wavelength range. If such a light source is present, the part should be covered or protected. If the white dome is
exposed to such a light source, the output leakage parameter of the phototransistor will increase.
2. CTR bin (FODB100 only)
FODB101: 100% – 200%
FODB102: 150% – 300%
3. Pin 1 and Pin 2 are shorted as input and Pin 3 and Pin 4 are shorted as output.
3
FODB100, FODB101, FODB102 Rev. 1.0.0
www.fairchildsemi.com
FODB100, FODB101, FODB102 Single Channel Microcoupler™
Typical Performance Characteristics
Fig. 1 Normalized CTR vs. Temperature (VCE = 2V)
Normalized CTR @ 25°C
IF = 2mA @ VCE = 2V
Fig. 2 Normalized CTR vs. Temperature (VCE = 5V)
Normalized CTR @ 25°C
1.2
IF = 2mA @ VCE = 5V
1.2
1
0.8
0.6
0.4
0.2
0
25
40
60
80
100
Temperature (°C)
120
140
IF = 500µA @ VCE = 2V
IF = 1mA @ VCE = 2V
1
0.8
0.6
0.4
0.2
0
25
40
60
80
IF = 500µA @ VCE = 5V
IF = 1mA @ VCE = 5V
100
120
140
Temperature (°C)
Fig. 3 Current Transfer Ratio vs.
Collector to Emitter Voltage
500
400
CTR (%)
300
200
100
0
0
2
4
VCE (V)
6
8
10
2mA
1mA
Fig. 4 Current Transfer Ratio vs.
Collector Saturation Voltage
350
300
250
CTR (%)
200
150
100
50
0
0
0.8
0.2
0.4
0.6
Collector Saturation Voltage (V)
1.0
2mA
1mA
500µA
500µA
Fig. 5 Baud Rate vs. Load Resistor
200
Baud Rate – Kbit/s
150
100
Vcc = 12V
50
Vcc = 5V
0
200
400
600
800 1000 1200 1400
R
L
- Load Resistor - Ohms
1600
I
F
= 1.47 mA
Ta = 23C, PRSG = (2
8
-1)
BER < 10
-6
4
FODB100, FODB101, FODB102 Rev. 1.0.0
www.fairchildsemi.com
FODB100, FODB101, FODB102 Single Channel Microcoupler™
Tape and Reel Specifications
Embossed Carrier Tape Configuration
P
0
T
E
1
D
0
F
K
0
W
c
B
0
E
2
W
T
c
A
0
P
1
D
1
User Direction of Feed
Dimensions are in millimeter
Pkg type
Optocoupler
(12mm)
A
0
3.80
±0.10
B
0
3.80
±0.10
W
12.0
+0.3/
–0.1
D
0
1.50
+0.25/
–0.00
D
1
1.50
+0.25/
–0.00
E
1
1.75
±0.10
E
2
10.25
min
F
5.50
±0.05
P
1
8.0
±0.1
P
0
4.0
±0.1
K
0
1.40
±0.10
T
0.279
±0.02
W
c
9.2
±0.3
T
c
0.06
±0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
0.5mm
maximum
Sketch A (Side or Front Sectional View)
Typical
component
center line
A0
Sketch B (Top View)
Sketch C (Top View)
Component Rotation
Component lateral movement
Component Rotation
Optocoupler Reel Configuration
W1 Measured at Hub
B Min
Dim C
Dim D
min
Dim A
max
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Reel
W2 max Measured at Hub
Dimension are in inches and millimeters
Tape Size
12mm
Reel
Option
13" Dia
Dim A
13.00
330
Dim B
0.059
1.5
Dim C
512 +0.020/–0.008
13 +0.5/–0.2
Dim D
0.795
20.2
Dim N
7.00
178
Dim W1
0.488 +0.078/–0.000
12.4 +2/–0
Dim W2
0.724
18.4
Dim W3 (LSL–USL)
0.469 – 0.606
11.9 – 15.4
5
FODB100, FODB101, FODB102 Rev. 1.0.0
www.fairchildsemi.com
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参数对比
与FODB100相近的元器件有:FODB100_06、FODB101、FODB102。描述及对比如下:
型号 FODB100 FODB100_06 FODB101 FODB102
描述 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
最大绝缘电压 2500 V 2500 V 2500 V 2500 V
是否Rohs认证 符合 - 符合 符合
厂商名称 Fairchild - Fairchild Fairchild
包装说明 LEAD FREE, MINIATURE, BGA-4 - LEAD FREE, MINIATURE, BGA-4 LEAD FREE, MINIATURE, BGA-4
Reach Compliance Code compli - compli compli
其他特性 UL RECOGNIZED, VDE APPROVED - UL RECOGNIZED, VDE APPROVED UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Mi 75 V - 75 V 75 V
配置 SINGLE - SINGLE SINGLE
当前传输比率-最小值 100% - 100% 150%
标称电流传输比 100% - 100% 150%
最大暗电源 100 nA - 100 nA 100 nA
最大正向电流 0.03 A - 0.03 A 0.03 A
最大正向电压 1.5 V - 1.5 V 1.5 V
JESD-609代码 e1 - e1 e1
安装特点 SURFACE MOUNT - SURFACE MOUNT SURFACE MOUNT
元件数量 1 - 1 1
最大通态电流 0.05 A - 0.05 A 0.05 A
最高工作温度 125 °C - 125 °C 125 °C
最低工作温度 -40 °C - -40 °C -40 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER - TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散 0.15 W - 0.15 W 0.15 W
表面贴装 YES - YES YES
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
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