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FODM2701BR1V

OPTOISO 3.75KV TRANSISTOR 4SMD

器件类别:光电子/LED   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
通道数
1
电压 - 隔离
3750Vrms
电流传输比(最小值)
50% @ 5mA
电流传输比(最大值)
300% @ 5mA
上升/下降时间(典型值)
3µs,3µs
输入类型
DC
输出类型
晶体管
电压 - 输出(最大值)
40V
电流 - 输出/通道
80mA
电压 - 正向(Vf)(典型值)
1.4V(最大)
电流 - DC 正向(If)
50mA
Vce 饱和值(最大值)
300mV
工作温度
-40°C ~ 110°C
安装类型
表面贴装
封装/外壳
4-SMD,鸥翼
供应商器件封装
4-Mini-Flat
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FODM121 Series, FODM124, FODM2701, FODM2705 —
4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
November 2015
FODM121 Series, FODM124, FODM2701,
FODM2705
4-Pin Full Pitch Mini-Flat Package Phototransistor
Optocouplers
Features
• More than 5 mm Creepage/Clearance
• Compact 4-Pin Surface Mount Package
(2.4 mm Maximum Standoff Height)
• Current Transfer Ratio in Selected Groups:
DC Input:
FODM121: 50–600%
FODM121A: 100–300%
FODM121B: 50–150%
FODM121C: 100–200%
FODM124: 100% MIN
FODM2701: 50–300%
AC Input:
FODM2705: 50–300%
• Safety and Regulatory Approvals:
– UL1577, 3,750 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
Digital Logic Inputs
Microprocessor Inputs
Power Supply Monitor
Twisted Pair Line Receiver
Telephone Line Receiver
Description
The FODM121 series, FODM124, and FODM2701
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54 mm. The FODM2705
consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
Functional Block Diagram
ANODE
1
4
COLLECTOR
CATHODE
2
3
EMITTER
Equivalent Circuit
FODM121, FODM124, FODM2701
ANODE
1
4
COLLECTOR
Figure 2. Package Outlines
CATHODE
2
3
EMITTER
Equivalent Circuit
FODM2705
Figure 1. Schematic
©2006 Fairchild Semiconductor Corporation
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7
www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 —
4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–III
40/110/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
Value
904
1060
565
6000
5
5
0.4
150
200
300
> 10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
°C
mA
mW
Ω
V
PR
V
IORM
V
IOTM
DTI
T
S
I
S,INPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature
(1)
Input Current
(1)
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
P
S,OUTPUT
Output Power
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7
www.fairchildsemi.com
2
FODM121 Series, FODM124, FODM2701, FODM2705 —
4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T
A
= 25°C Unless otherwise specified.
Symbol
TOTAL PACKAGE
T
STG
T
OPR
T
J
T
SOL
EMITTER
I
F (avg)
I
F (pk)
V
R
P
D
DETECTOR
I
C
V
CEO
V
ECO
P
D
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Parameter
Value
-40 to +125
-40 to +110
-40 to +125
260 for 10 sec
50
1
6
70
1.41
80
Unit
°C
°C
°C
°C
mA
A
V
mW
mW/°C
mA
V
V
mW
mW/°C
Continuous Forward Current
Peak Forward Current (1 µs pulse, 300 pps.)
Reverse Voltage
Power Dissipation
Derate linearly (Above 75°C)
Continuous Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Power Dissipation
Derate linearly (Above 80°C)
FODM121 Series, FODM124
FODM2701, FODM2705
80
40
6
150
3.27
©2006 Fairchild Semiconductor Corporation
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7
www.fairchildsemi.com
3
FODM121 Series, FODM124, FODM2701, FODM2705 —
4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
Emitter
Parameter
Device
Test Conditions
Min.
Typ.
Max.
Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
FODM121 Series,
I
F
= 10 mA
FODM124
V
F
Forward Voltage
FODM2701
FODM2705
I
R
Detector
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance
FODM121 Series,
FODM124
FODM2701,
FODM2705
All
All
All
FODM2701
FODM2705
FODM121
CTR
DC Current Transfer
Ratio
FODM121A
FODM121B
FODM121C
FODM124
CTR Symmetry
FODM2705
FODM124
FODM2701
FODM2705
t
r
t
f
Rise Time
(Non-Saturated)
Fall Time
(Non-Saturated)
Steady State Isolation
Voltage
(2)
All
All
I
F
= 1 mA, V
CE
= 0.5 V
I
F
= 0.5 mA, V
CE
= 1.5 V
I
F
= ±5 mA, V
CE
= 5 V
I
F
= 1 mA, I
C
= 0.5 mA
I
F
= 10 mA, I
C
= 2 mA
I
F
= ±10 mA, I
C
= 2 mA
I
C
= 2 mA, V
CE
= 5 V,
R
L
= 100
Ω
I
C
= 2 mA, V
CE
= 5 V,
R
L
= 100
Ω
3
3
I
F
= 5 mA, V
CE
= 5 V
80
I
C
= 1 mA, I
F
= 0
40
I
E
= 100 µA, I
F
= 0
V
CE
= 40 V, I
F
= 0
V
CE
= 0 V, f = 1 MHz
I
F
= 5 mA, V
CE
= 5 V
I
F
= ±5 mA, V
CE
= 5 V
50
50
50
100
50
100
100
50
0.3
3.0
0.4
0.4
0.3
0.3
µs
µs
V
10
300
300
600
300
150
200
1200
%
7
100
V
nA
pF
V
Reverse Current
I
F
= 5 mA
I
F
= ±5 mA
1.0
1.3
V
1.4
FODM121 Series,
FODM124,
V
R
= 5 V
FODM2701
5
µA
BV
CEO
BV
ECO
I
CEO
C
CE
TRANSFER CHARACTERISTICS
FODM121 Series I
F
= 8 mA, I
C
= 2.4 mA
V
CE(SAT)
Saturation Voltage
ISOLATION CHARACTERISTICS
V
ISO
All
1 minute
3750
VAC
RMS
Note:
2. Steady state isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
common, and pins 3 and 4 are common.
©2006 Fairchild Semiconductor Corporation
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7
www.fairchildsemi.com
4
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