FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET
September 2007
QFET
FQA11N90 / FQA11N90_F109
900V N-Channel MOSFET
Features
•
•
•
•
•
•
•
11.4A, 900V, R
DS(on)
= 0.96Ω @V
GS
= 10 V
Low gate charge ( typical 72 nC)
Low Crss ( typical 30pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3P
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQA11N90
900
11.4
7.2
45.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
1000
11.4
30
4.0
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
Units
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
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FQA11N90 / FQA11N90_F109 Rev. A2
FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQA11N90
FQA11N90
Device
FQA11N90
FQA11N90_F109
Package
TO-3P
TO-3PN
T
C
= 25°C unless otherwise noted
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 900 V, V
GS
= 0 V
V
DS
= 720 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 5.7 A
V
DS
= 50 V, I
D
= 5.7 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
(Note 4)
Min
900
--
--
--
--
--
3.0
--
--
--
--
--
Typ
--
1.0
--
--
--
--
--
0.75
12
2700
260
30
Max Units
--
--
10
100
100
-100
5.0
0.96
--
3500
340
40
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 450 V, I
D
= 11.4A,
R
G
= 25
Ω
--
--
--
(Note 4, 5)
65
135
165
90
72
16
35
--
--
--
850
11.2
140
280
340
190
94
--
--
--
--
--
V
DS
= 720 V, I
D
= 11.4A,
V
GS
= 10 V
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
=11.4 A
V
GS
= 0 V, I
S
= 11.4 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
11.4
45.6
1.4
--
--
A
A
V
ns
µC
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15mH, I
AS
=11.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
11.4A, di/dt
≤200A/µs,
V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
FQA11N90 / FQA11N90_F109 Rev. A2
2
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FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
Figure 2. Transfer Characteristics
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
25 C
10
0
o
o
10
0
-55 C
o
10
-1
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
-1
0
1
※
Notes :
1. V
DS
= 50V
2. 250µ s Pulse Test
10
-1
10
10
10
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2.0
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
1.6
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
10
1
V
GS
= 20V
1.2
10
0
0.8
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
※
Note : T
J
= 25
℃
0.4
0
8
16
24
32
40
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
5000
4500
4000
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
C
iss
V
GS
, Gate-Source Voltage [V]
10
V
DS
= 180V
V
DS
= 450V
Capacitance [pF]
8
3000
2500
2000
1500
1000
500
0
-1
10
C
oss
V
DS
= 720V
6
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 11.4 A
10
0
10
1
0
0
10
20
30
40
50
60
70
80
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
FQA11N90 / FQA11N90_F109 Rev. A2
3
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FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 5.7 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
12
10
2
Operation in This Area
is Limited by R
DS(on)
10
I
D
, Drain Current [A]
I
D
, Drain Current [A]
100
µ
s
10
1
10
µ
s
DC
10
0
1 ms
10 ms
8
6
4
10
-1
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
2
10
-2
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 11. Transient Thermal Response Curve
Z
θ
JC
(t), Thermal Response
D = 0 .5
10
-1
0 .2
0 .1
0 .0 5
0 .0 2
※
N o te s :
1 . Z
θ
J C
( t) = 0 .4 2
℃
/W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t)
P
DM
s in g le p u ls e
10
-2
0 .0 1
t
1
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FQA11N90 / FQA11N90_F109 Rev. A2
4
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FQA11N90 / FQA11N90_F109 900V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQA11N90 / FQA11N90_F109 Rev. A2
5
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