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FR1002GD

Rectifier Diode, 10A, 100V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
R-PSFM-T3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
应用
FAST RECOVERY
外壳连接
ANODE AND CATHODE
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-220AB
JESD-30 代码
R-PSFM-T3
湿度敏感等级
1
最大非重复峰值正向电流
125 A
元件数量
2
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
10 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
100 V
最大反向电流
5 µA
最大反向恢复时间
0.15 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
FR1001G
THRU
FR1007G
10 AMPS. Glass Passivated Fast Recovery Rectifiers
Voltage Range
50 to 1000 Volts
Current
10 Amperes
Features
a
a
a
a
a
a
a
a
a
a
TO-220
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: ITO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-
Terminals:
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
250°C/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
a
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FR
FR
FR
FR
FR
FR
FR
Units
Type Number
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
C
=25°C
at Rated DC Blocking Voltage @ T
C
=125°C
Maximum Reverse Recovery Time ( Note 1)
Typical Thermal Resistance RÛJC (Note 2)
Operating and Storage Temperature Range T
J
,T
STG
50
35
50
100
70
100
200
140
200
400
280
400
10
125
1.3
5.
0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
°C/W
°C
150
250
3.0
-65 to +150
500
Notes: 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink.
- 272 -
RATINGS AND CHARACTERISTIC CURVES (FR1001G THRU FR1007G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
DUT
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
(+)
50Vdc
(approx)
(-)
1W
NON
INDUCTIVE
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
AVERAGE FORWARD CURRENT. (A)
12.0
10.0
8.0
6.0
4.0
0.2
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER LEG
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
100
Tj=125
0
C
10
0
50
LEAD TEMPERATURE. ( C)
o
100
150
PEAK FORWARD SURGE CURRENT. (A)
150
125
100
75
50
25
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
1.0
Tj=25
0
C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
80
1
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT. (A)
40
20
10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG
300
250
200
150
100
50
0.1
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0.5
1.0
5
10
50
100
500
1000
0
4
2
1.0
CAPACITANCE.(pF)
.4
.2
.1
.8
.9
1.0
1.1
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
1.2
1.3
1.4
1.5
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
- 273-
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